RFB18N10CS

Harris Corporation RFB18N10CS

The picture is for reference only, please refer to the product specification

  • RFB18N10CS
  • Harris Corporation
  • MOSFET N-CH 100V 18A TO220AB-5
  • Transistors - FETs, MOSFETs - Single
  • RFB18N10CS Datasheet
  • TO-220-5
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4381
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
RFB18N10CS
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Harris Corporation
Description
MOSFET N-CH 100V 18A TO220AB-5
Package
Cut Tape (CT)
Series
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-5
Supplier Device Package
TO-220AB-5
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
79W (Tc)
FET Type
N-Channel
FET Feature
Current Sensing
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Rds On (Max) @ Id, Vgs
100mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
-
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
-
Package_case
TO-220-5

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