Harris Corporation RFD20N03SM9AR4761
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- RFD20N03SM9AR4761
- Harris Corporation
- 20A, 30V, 0.025 OHM, N-CHANNEL
- Transistors - FETs, MOSFETs - Arrays
- RFD20N03SM9AR4761 Datasheet
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- Bulk
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Lead free / RoHS Compliant - 1442
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What is RFD20N03SM9AR4761
Harris Corporation Part Number RFD20N03SM9AR4761（Transistors - FETs, MOSFETs - Arrays）, developed and manufactured by Harris Corporation, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
RFD20N03SM9AR4761 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
RFD20N03SM9AR4761 Specifications
- Part NumberRFD20N03SM9AR4761
- CategoryTransistors - FETs, MOSFETs - Arrays
- ManufacturerHarris Corporation
- Description20A, 30V, 0.025 OHM, N-CHANNEL
- PackageBulk
- Series-
- Operating Temperature-
- Mounting Type-
- Package / Case-
- Supplier Device Package-
- Power - Max-
- FET Type-
- FET Feature-
- Drain to Source Voltage (Vdss)-
- Current - Continuous Drain (Id) @ 25°C-
- Rds On (Max) @ Id, Vgs-
- Vgs(th) (Max) @ Id-
- Gate Charge (Qg) (Max) @ Vgs-
- Input Capacitance (Ciss) (Max) @ Vds-
Application of RFD20N03SM9AR4761
RFD20N03SM9AR4761 Datasheet
RFD20N03SM9AR4761 Datasheet , Bulk
RFD20N03SM9AR4761 Classification
Transistors - FETs, MOSFETs - Arrays
FAQ about Transistors - FETs, MOSFETs - Arrays
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1. What is the difference between transistors, FETs and MOSFETs?
The main differences between transistors, FETs and MOSFETs are their structure, working principle and application scenarios.
Transistor
A transistor is a three-terminal semiconductor device used to switch or amplify signals. It is divided into two main types: bipolar junction transistor (BJT) and field effect transistor (FET).
BJT: It consists of three layers of alternating P-type and N-type semiconductor materials, and uses two types of charge carriers (electrons and holes). It controls the collector current through the base current, with high gain but low input impedance.
FET: Including JFET and MOSFET, it uses electric fields to control charge carriers in semiconductor materials. FET is a unipolar transistor involving single-carrier operation.
FET (Field-Effect Transistor)
FET is a transistor that uses electric fields to control charge carriers in semiconductor materials. It is divided into JFET and MOSFET.
JFET: The simplest field effect transistor, which uses gate voltage to control the current between the drain and source. It is divided into two types, N-channel and P-channel, with high input impedance and low noise characteristics.
MOSFET: A four-terminal semiconductor field-effect transistor that controls the current between the source and drain through the gate voltage. MOSFET has high input impedance and is widely used in power amplifiers and switches, as well as embedded system design.
MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
MOSFET is a type of FET with four terminals: source, gate, drain, and body (or substrate). The body of the MOSFET is usually connected to the source terminal, making it appear as a three-terminal device in the circuit diagram. Due to its high input impedance, MOSFET plays an important role in integrated circuits, mainly used in power amplifiers and switches, and occupies an important position in embedded system design.
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2. What are the two types of MOSFET transistors?
There are two main types of MOSFET transistors: enhancement MOSFET and depletion MOSFET.
Enhancement MOSFET
When the gate voltage of the enhancement MOSFET is zero, there is no conductive channel between the source and the drain. Only when the gate voltage reaches a certain threshold voltage, the conductive channel will be formed and the current will begin to flow. This type of MOSFET requires a positive voltage to be applied to the gate to turn on, and is in a high-resistance state when no voltage is applied.
Depletion-type MOSFET
When the gate voltage of a depletion-type MOSFET is zero, a conductive channel already exists between the source and drain. Applying a negative gate voltage can reduce or deplete the conductive channel, thereby controlling the current. This type of MOSFET is already turned on when no voltage is applied, and needs to be turned off by applying a negative voltage.
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3. Is MOSFET a transistor?
MOSFET is a type of transistor. MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a metal oxide semiconductor field effect transistor, which is a type of field effect transistor.
Basic concepts and characteristics of MOSFET
MOSFET is an insulated gate field effect transistor that mainly controls the conductive channel between the source and the drain through the gate voltage. Its working principle is to apply voltage to the gate to form an electric field, thereby controlling the charge distribution on the surface of the semiconductor and thus controlling the flow of current. MOSFET has the advantages of high input impedance, low noise, and good frequency characteristics, and is widely used in analog circuits and digital circuits.
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