Vishay Semiconductor - Diodes Division RGF1M-E3/67A
- RGF1M-E3/67A
- Vishay Semiconductor - Diodes Division
- DIODE GEN PURP 1KV 1A DO214BA
- Diodes - Rectifiers - Single
- RGF1M-E3/67A Datasheet
- DO-214BA
- -Reel®
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What is RGF1M-E3/67A
Vishay Semiconductor - Diodes Division Part Number RGF1M-E3/67A(Diodes - Rectifiers - Single), developed and manufactured by Vishay Semiconductor - Diodes Division, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
RGF1M-E3/67A is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
RGF1M-E3/67A Specifications
- Part NumberRGF1M-E3/67A
- CategoryDiodes - Rectifiers - Single
- ManufacturerVishay Semiconductor - Diodes Division
- DescriptionDIODE GEN PURP 1KV 1A DO214BA
- Package-Reel®
- SeriesSUPERECTIFIER®
- Mounting TypeSurface Mount
- Package / CaseDO-214BA
- Supplier Device PackageDO-214BA (GF1)
- Diode TypeStandard
- Current - Average Rectified (Io)1A
- Voltage - Forward (Vf) (Max) @ If1.3 V @ 1 A
- Current - Reverse Leakage @ Vr5 µA @ 1000 V
- Capacitance @ Vr, F8.5pF @ 4V, 1MHz
- Voltage - DC Reverse (Vr) (Max)1000 V
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)500 ns
- Operating Temperature - Junction-65°C ~ 175°C
Application of RGF1M-E3/67A
RGF1M-E3/67A Datasheet
RGF1M-E3/67A Datasheet , -Reel®,SUPERECTIFIER®,Surface Mount,DO-214BA,DO-214BA (GF1),Standard,1A,1.3 V @ 1 A,5 µA @ 1000 V,8.5pF @ 4V, 1MHz,1000 V,Fast Recovery =< 500ns, > 200mA (Io),500 ns,-65°C ~ 175°C
RGF1M-E3/67A Classification
Diodes - Rectifiers - Single
FAQ about Diodes - Rectifiers - Single
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1. What is the difference between Schottky diodes and traditional silicon rectifier diodes?
Schottky diodes have a lower forward voltage drop (typically 0.2V to 0.3V) and faster switching speed, making them suitable for high-frequency applications. However, their reverse voltage is relatively low and is typically used in circuits with lower voltages.
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2. How to identify the polarity of a single rectifier diode?
Rectifying diodes usually have polarity markings, with the positive (anode) of the diode being "+" and the negative (cathode) being "-". On the packaging of diodes, there is usually a circular mark on the cathode side indicating the direction of the diode.
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3. How to improve the efficiency of rectifier diodes?
The use of Schottky diodes or fast recovery diodes can reduce forward voltage drop and reverse recovery time, thereby improving the efficiency of rectifier circuits, especially in high-frequency applications.
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