RN1105MFV,L3F(CT

Toshiba Semiconductor and Storage RN1105MFV,L3F(CT

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  • RN1105MFV,L3F(CT
  • Toshiba Semiconductor and Storage
  • TRANS PREBIAS NPN 50V 0.1A VESM
  • Transistors - Bipolar (BJT) - Single, Pre-Biased
  • RN1105MFV,L3F(CT Datasheet
  • SOT-723
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 16083
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
RN1105MFV,L3F(CT
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS PREBIAS NPN 50V 0.1A VESM
Package
Tape & Reel (TR)
Series
-
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM
Power - Max
150 mW
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Frequency - Transition
-
Resistor - Base (R1)
2.2 kOhms
Resistor - Emitter Base (R2)
47 kOhms
Package_case
SOT-723

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage is a company dedicated to the research, development, production, and sales of semiconductor and storage solutions.
In 1875, Toshiba Semiconductor and Storage was founded in Tokyo, Japan. The company's products...
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