STMicroelectronics SCTW35N65G2VAG
- SCTW35N65G2VAG
- STMicroelectronics
- SICFET N-CH 650V 45A HIP247
- Transistors - FETs, MOSFETs - Single
- SCTW35N65G2VAG Datasheet
- TO-247-3
- Tube
- Lead free / RoHS Compliant
- 898
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SCTW35N65G2VAG |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer STMicroelectronics |
Description SICFET N-CH 650V 45A HIP247 |
Package Tube |
Series Automotive, AEC-Q101 |
Operating Temperature -55°C ~ 200°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package HiP247™ |
Technology SiCFET (Silicon Carbide) |
Power Dissipation (Max) 240W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 650 V |
Current - Continuous Drain (Id) @ 25°C 45A (Tc) |
Rds On (Max) @ Id, Vgs 67mOhm @ 20A, 20V |
Vgs(th) (Max) @ Id 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V |
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 400 V |
Vgs (Max) +22V, -10V |
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V |
Package_case TO-247-3 |
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STMicroelectronics
STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual ...
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