STMicroelectronics SCTW40N120G2V
- SCTW40N120G2V
- STMicroelectronics
- SILICON CARBIDE POWER MOSFET 120
- Transistors - FETs, MOSFETs - Single
- SCTW40N120G2V Datasheet
- TO-247-3
- Tube
- Lead free / RoHS Compliant
- 4577
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SCTW40N120G2V |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer STMicroelectronics |
Description SILICON CARBIDE POWER MOSFET 120 |
Package Tube |
Series - |
Operating Temperature -55°C ~ 200°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package HiP247™ |
Technology SiC (Silicon Carbide Junction Transistor) |
Power Dissipation (Max) 278W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 1200 V |
Current - Continuous Drain (Id) @ 25°C 36A (Tc) |
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 18V |
Vgs(th) (Max) @ Id 4.9V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 18 V |
Input Capacitance (Ciss) (Max) @ Vds 1233 pF @ 800 V |
Vgs (Max) +22V, -10V |
Drive Voltage (Max Rds On, Min Rds On) 18V |
Package_case TO-247-3 |
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