SCTW40N120G2V

STMicroelectronics SCTW40N120G2V

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  • SCTW40N120G2V
  • STMicroelectronics
  • SILICON CARBIDE POWER MOSFET 120
  • Transistors - FETs, MOSFETs - Single
  • SCTW40N120G2V Datasheet
  • TO-247-3
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4577
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SCTW40N120G2V
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
STMicroelectronics
Description
SILICON CARBIDE POWER MOSFET 120
Package
Tube
Series
-
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
HiP247™
Technology
SiC (Silicon Carbide Junction Transistor)
Power Dissipation (Max)
278W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
1233 pF @ 800 V
Vgs (Max)
+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)
18V
Package_case
TO-247-3

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STMicroelectronics
STMicroelectronics
STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual ...
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