TP65H035G4WSQA

Transphorm TP65H035G4WSQA

The picture is for reference only, please refer to the product specification

  • TP65H035G4WSQA
  • Transphorm
  • 650 V 46.5 GAN FET
  • Transistors - FETs, MOSFETs - Single
  • TP65H035G4WSQA Datasheet
  • TO-247-3
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4113
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
TP65H035G4WSQA
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Transphorm
Description
650 V 46.5 GAN FET
Package
Tube
Series
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Technology
GaNFET (Gallium Nitride)
Power Dissipation (Max)
187W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
47.2A (Tc)
Rds On (Max) @ Id, Vgs
41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-247-3

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• Guaranteed Quality

• Global Access

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