SI2308CDS-T1-GE3

Vishay Siliconix SI2308CDS-T1-GE3

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  • SI2308CDS-T1-GE3
  • Vishay Siliconix
  • MOSFET N-CH 60V 2.6A SOT23-3
  • Transistors - FETs, MOSFETs - Single
  • SI2308CDS-T1-GE3 Datasheet
  • TO-236-3, SC-59, SOT-23-3
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3439
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SI2308CDS-T1-GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 60V 2.6A SOT23-3
Package
Cut Tape (CT)
Series
TrenchFET® Gen IV
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.6W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Tc)
Rds On (Max) @ Id, Vgs
144mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
105 pF @ 30 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
TO-236-3, SC-59, SOT-23-3

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Vishay Siliconix
Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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