SI2336DS-T1-GE3

Vishay Siliconix SI2336DS-T1-GE3

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  • SI2336DS-T1-GE3
  • Vishay Siliconix
  • MOSFET N-CH 30V 5.2A SOT23-3
  • Transistors - FETs, MOSFETs - Single
  • SI2336DS-T1-GE3 Datasheet
  • TO-236-3, SC-59, SOT-23-3
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4026
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SI2336DS-T1-GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 30V 5.2A SOT23-3
Package
Cut Tape (CT)
Series
TrenchFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.25W (Ta), 1.8W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
5.2A (Tc)
Rds On (Max) @ Id, Vgs
42mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds
560 pF @ 15 V
Vgs (Max)
±8V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Package_case
TO-236-3, SC-59, SOT-23-3

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Vishay Siliconix
Vishay Siliconix
In 1996, Vishay Siliconix became a part of Vishay. Vishay Siliconix is a company that manufactures semiconductor devices and integrated circuits.
Vishay Siliconix products mainly include high-performance power MOSFETs, insulated gate bipolar transistors, power...
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