Vishay Siliconix SI4900DY-T1-GE3
- SI4900DY-T1-GE3
- Vishay Siliconix
- MOSFET 2N-CH 60V 5.3A 8-SOIC
- Transistors - FETs, MOSFETs - Arrays
- SI4900DY-T1-GE3 Datasheet
- 8-SOIC (0.154\", 3.90mm Width)
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 7780
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SI4900DY-T1-GE3 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Vishay Siliconix |
Description MOSFET 2N-CH 60V 5.3A 8-SOIC |
Package Cut Tape (CT) |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-SOIC (0.154\", 3.90mm Width) |
Supplier Device Package 8-SOIC |
Power - Max 3.1W |
FET Type 2 N-Channel (Dual) |
FET Feature Logic Level Gate |
Drain to Source Voltage (Vdss) 60V |
Current - Continuous Drain (Id) @ 25°C 5.3A |
Rds On (Max) @ Id, Vgs 58mOhm @ 4.3A, 10V |
Vgs(th) (Max) @ Id 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 665pF @ 15V |
Package_case 8-SOIC (0.154\", 3.90mm Width) |
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Vishay Siliconix
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