SI4900DY-T1-GE3

Vishay Siliconix SI4900DY-T1-GE3

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  • SI4900DY-T1-GE3
  • Vishay Siliconix
  • MOSFET 2N-CH 60V 5.3A 8-SOIC
  • Transistors - FETs, MOSFETs - Arrays
  • SI4900DY-T1-GE3 Datasheet
  • 8-SOIC (0.154\", 3.90mm Width)
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 7780
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SI4900DY-T1-GE3
Category
Transistors - FETs, MOSFETs - Arrays
Manufacturer
Vishay Siliconix
Description
MOSFET 2N-CH 60V 5.3A 8-SOIC
Package
Cut Tape (CT)
Series
TrenchFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154\", 3.90mm Width)
Supplier Device Package
8-SOIC
Power - Max
3.1W
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
5.3A
Rds On (Max) @ Id, Vgs
58mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
665pF @ 15V
Package_case
8-SOIC (0.154\", 3.90mm Width)

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Vishay Siliconix
Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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