Monolithic Power Systems Inc. LN60A01ES-LF-Z
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- LN60A01ES-LF-Z
- Monolithic Power Systems Inc.
- MOSFET 3N-CH 600V 0.08A 8SOIC
- Transistors - FETs, MOSFETs - Arrays
- LN60A01ES-LF-Z Datasheet
- 8-SOIC (0.154\", 3.90mm Width)
- Tape & Reel (TR)
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Lead free / RoHS Compliant - 3183
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
What is LN60A01ES-LF-Z
Monolithic Power Systems Inc. Part Number LN60A01ES-LF-Z（Transistors - FETs, MOSFETs - Arrays）, developed and manufactured by Monolithic Power Systems Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
LN60A01ES-LF-Z is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
LN60A01ES-LF-Z Specifications
- Part NumberLN60A01ES-LF-Z
- CategoryTransistors - FETs, MOSFETs - Arrays
- ManufacturerMonolithic Power Systems Inc.
- DescriptionMOSFET 3N-CH 600V 0.08A 8SOIC
- PackageTape & Reel (TR)
- Series-
- Operating Temperature-20°C ~ 125°C (TJ)
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154\", 3.90mm Width)
- Supplier Device Package8-SOIC
- Power - Max1.3W
- FET Type3 N-Channel, Common Gate
- FET FeatureStandard
- Drain to Source Voltage (Vdss)600V
- Current - Continuous Drain (Id) @ 25°C80mA
- Rds On (Max) @ Id, Vgs190Ohm @ 10mA, 10V
- Vgs(th) (Max) @ Id1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs-
- Input Capacitance (Ciss) (Max) @ Vds-
Application of LN60A01ES-LF-Z
LN60A01ES-LF-Z Datasheet
LN60A01ES-LF-Z Datasheet , Tape & Reel (TR),-20°C ~ 125°C (TJ),Surface Mount,8-SOIC (0.154\", 3.90mm Width),8-SOIC,1.3W,3 N-Channel, Common Gate,Standard,600V,80mA,190Ohm @ 10mA, 10V,1.2V @ 250µA
LN60A01ES-LF-Z Classification
Transistors - FETs, MOSFETs - Arrays
FAQ about Transistors - FETs, MOSFETs - Arrays
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1. What is the difference between transistors, FETs and MOSFETs?
The main differences between transistors, FETs and MOSFETs are their structure, working principle and application scenarios.
Transistor
A transistor is a three-terminal semiconductor device used to switch or amplify signals. It is divided into two main types: bipolar junction transistor (BJT) and field effect transistor (FET).
BJT: It consists of three layers of alternating P-type and N-type semiconductor materials, and uses two types of charge carriers (electrons and holes). It controls the collector current through the base current, with high gain but low input impedance.
FET: Including JFET and MOSFET, it uses electric fields to control charge carriers in semiconductor materials. FET is a unipolar transistor involving single-carrier operation.
FET (Field-Effect Transistor)
FET is a transistor that uses electric fields to control charge carriers in semiconductor materials. It is divided into JFET and MOSFET.
JFET: The simplest field effect transistor, which uses gate voltage to control the current between the drain and source. It is divided into two types, N-channel and P-channel, with high input impedance and low noise characteristics.
MOSFET: A four-terminal semiconductor field-effect transistor that controls the current between the source and drain through the gate voltage. MOSFET has high input impedance and is widely used in power amplifiers and switches, as well as embedded system design.
MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
MOSFET is a type of FET with four terminals: source, gate, drain, and body (or substrate). The body of the MOSFET is usually connected to the source terminal, making it appear as a three-terminal device in the circuit diagram. Due to its high input impedance, MOSFET plays an important role in integrated circuits, mainly used in power amplifiers and switches, and occupies an important position in embedded system design.
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2. What are the two types of MOSFET transistors?
There are two main types of MOSFET transistors: enhancement MOSFET and depletion MOSFET.
Enhancement MOSFET
When the gate voltage of the enhancement MOSFET is zero, there is no conductive channel between the source and the drain. Only when the gate voltage reaches a certain threshold voltage, the conductive channel will be formed and the current will begin to flow. This type of MOSFET requires a positive voltage to be applied to the gate to turn on, and is in a high-resistance state when no voltage is applied.
Depletion-type MOSFET
When the gate voltage of a depletion-type MOSFET is zero, a conductive channel already exists between the source and drain. Applying a negative gate voltage can reduce or deplete the conductive channel, thereby controlling the current. This type of MOSFET is already turned on when no voltage is applied, and needs to be turned off by applying a negative voltage.
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3. Why do we use MOSFET instead of FET?
The main reason why we use MOSFET instead of FET is the characteristics and advantages of MOSFET.
MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) is a voltage-controlled device with the following main features and advantages:
Fast switching speed: MOSFET has a very fast switching speed, which makes it perform well in high-frequency applications. Its fast switching characteristics make MOSFET widely used in switching power supplies, motor control, inverters and other fields.
High input impedance: The input impedance of MOSFET is very high, which means that it is less sensitive to external interference during operation and can provide more stable performance.
Low noise: Since MOSFET is a voltage-controlled device, it generates less noise during operation, which is suitable for noise-sensitive application scenarios.
Low drive power: MOSFET has a small drive power, which means that the design of the drive circuit can be simpler and more efficient.
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