LN60A01EP-LF

Monolithic Power Systems Inc. LN60A01EP-LF

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  • LN60A01EP-LF
  • Monolithic Power Systems Inc.
  • MOSFET 3N-CH 600V 0.08A 8DIP
  • Transistors - FETs, MOSFETs - Arrays
  • LN60A01EP-LF Datasheet
  • 8-DIP (0.300", 7.62mm)
  • 8-DIP (0.300", 7.62mm)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1806
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates

What is LN60A01EP-LF

Monolithic Power Systems Inc. Part Number LN60A01EP-LFTransistors - FETs, MOSFETs - Arrays), developed and manufactured by Monolithic Power Systems Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.

LN60A01EP-LF is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.

LN60A01EP-LF Specifications

  • Part NumberLN60A01EP-LF
  • CategoryTransistors - FETs, MOSFETs - Arrays
  • ManufacturerMonolithic Power Systems Inc.
  • DescriptionMOSFET 3N-CH 600V 0.08A 8DIP
  • Package8-DIP (0.300", 7.62mm)
  • Series-
  • Operating Temperature-20°C ~ 125°C (TJ)
  • Mounting TypeThrough Hole
  • Package / Case8-DIP (0.300", 7.62mm)
  • Supplier Device Package8-PDIP
  • Power - Max1.3W
  • FET Type3 N-Channel, Common Gate
  • FET FeatureStandard
  • Drain to Source Voltage (Vdss)600V
  • Current - Continuous Drain (Id) @ 25°C80mA
  • Rds On (Max) @ Id, Vgs190 Ohm @ 10mA, 10V
  • Vgs(th) (Max) @ Id1.2V @ 250µA

Application of LN60A01EP-LF

FETs and MOSFET Arrays (FETs, MOSFETs) are widely used in various fields. In the field of communication, they are widely used in key components such as RF front ends, signal amplifiers and filters to improve the transmission efficiency and signal quality of communication systems. In the computer field, FET and MOSFET array as an important part of CPU, GPU and other core processors, assume the key role of data processing and computing tasks. In addition, in automotive electronics, industrial automation, medical equipment and other fields, FET and MOSFET arrays also play an important role, such as for motor drive control, power management, sensor signal processing and so on.

LN60A01EP-LF Datasheet

LN60A01EP-LF Datasheet , 8-DIP (0.300", 7.62mm),-20°C ~ 125°C (TJ),Through Hole,8-DIP (0.300", 7.62mm),8-PDIP,1.3W,3 N-Channel, Common Gate,Standard,600V,80mA,190 Ohm @ 10mA, 10V,1.2V @ 250µA

LN60A01EP-LF Classification

Transistors - FETs, MOSFETs - Arrays

FETs and MOSFET arrays (FETS, MOSFETs-Arrays) are composed of multiple Field-Effect transistors. FET) or Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is an integrated circuit module. This array design provides high power processing capabilities while maintaining good thermal management and control characteristics. An FET or MOSFET array typically includes multiple transistors that can be connected in series, parallel, or in combination to meet specific current and voltage requirements.

FAQ about Transistors - FETs, MOSFETs - Arrays

  • 1. What is the difference between transistors, FETs and MOSFETs?

    The main differences between transistors, FETs and MOSFETs are their structure, working principle and application scenarios.
    Transistor
    A transistor is a three-terminal semiconductor device used to switch or amplify signals. It is divided into two main types: bipolar junction transistor (BJT) and field effect transistor (FET).
    BJT: It consists of three layers of alternating P-type and N-type semiconductor materials, and uses two types of charge carriers (electrons and holes). It controls the collector current through the base current, with high gain but low input impedance.
    FET: Including JFET and MOSFET, it uses electric fields to control charge carriers in semiconductor materials. FET is a unipolar transistor involving single-carrier operation.
    FET (Field-Effect Transistor)
    FET is a transistor that uses electric fields to control charge carriers in semiconductor materials. It is divided into JFET and MOSFET.
    JFET: The simplest field effect transistor, which uses gate voltage to control the current between the drain and source. It is divided into two types, N-channel and P-channel, with high input impedance and low noise characteristics.
    MOSFET: A four-terminal semiconductor field-effect transistor that controls the current between the source and drain through the gate voltage. MOSFET has high input impedance and is widely used in power amplifiers and switches, as well as embedded system design.
    MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
    MOSFET is a type of FET with four terminals: source, gate, drain, and body (or substrate). The body of the MOSFET is usually connected to the source terminal, making it appear as a three-terminal device in the circuit diagram. Due to its high input impedance, MOSFET plays an important role in integrated circuits, mainly used in power amplifiers and switches, and occupies an important position in embedded system design.

  • 2. What is MOSFET and how does it work?

    MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), that is, metal-oxide-semiconductor field effect transistor, is a transistor that uses electric field effect to control conduction and shutdown. MOSFET controls the flow of current between the source and drain by applying voltage to the gate. Its working principle is as follows:
    Working principle:
    When a positive voltage is applied to the gate, the electric field causes the impurities in the substrate to form an "open" n-type or p-type conductive area, i.e., a channel, between the gate and the substrate. A capacitor is formed between the oxide layer above the channel and the gate, called the gate capacitance. When the channel conductive area extends to the source and drain, the MOSFET is in the on state. In the on state, the voltage difference between the source and the drain drives the current to flow through the conductive area.
    When a negative voltage is applied to the gate, the channel on the substrate shrinks, the conductivity weakens, and the current between the source and the drain decreases. When the gate voltage continues to decrease, the channel eventually disappears, the MOSFET is in the off state, there is no conductive path between the source and the drain, and the MOSFET is in a high-resistance state.

  • 3. What devices use MOSFET?

    MOSFET (metal oxide semiconductor field effect transistor) is widely used in many fields and devices, mainly including the following aspects:
    Power management:
    Switching regulator: MOSFET is often used as a key component of switching regulators (such as PWM control), and achieves high-efficiency voltage conversion and current regulation by controlling its switching state. In circuits such as battery management and charging control, MOSFET ensures the safety and service life of the battery.
    LED driver: In the field of LED lighting, MOSFET is used to drive LED lights to achieve energy-saving and efficient lighting control.
    DC-DC converter: In the power conversion system, MOSFET is an important component of the DC-DC converter, which can convert one DC voltage to another DC voltage.
    Motor control:
    Motor drive: MOSFET is used to drive the motor in the motor control system to realize the start and stop and speed regulation of the motor. In the fields of automobiles, industry, household appliances, etc., MOSFET is the core component of motor control.
    Braking system: In the braking system of the car, MOSFET controls the current to achieve precise control of the braking function.
    Communication equipment:
    Power amplifier: In mobile communication base stations, MOSFET is used as a power amplifier to amplify and process signals to improve communication quality.
    RF switch: The fast switching speed and high frequency response capability of MOSFET make it suitable for RF switch to achieve fast switching and routing of signals.
    Modulator, mixer: In wireless communication systems, MOSFET is used in key components such as modulators and mixers to achieve signal modulation and frequency conversion.
    Consumer electronics:
    Digital electronic products: MOSFET is widely used in digital electronic products such as mobile phones, tablets, and laptops for power management, signal processing and other circuits.
    Display equipment: In display devices such as LCD TVs and monitors, MOSFET is used to drive backlights, control display panels, etc.
    Medical equipment:
    Power management: In medical equipment, MOSFET is used for power management to ensure stable operation and efficient energy consumption of equipment.
    Signal amplification: The high input resistance and low noise characteristics of MOSFET make it used in medical monitors and other equipment to amplify physiological signals (such as electrocardiogram, electroencephalogram, etc.)

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Do you have any questions about LN60A01EP-LF ?
Feel free to contact us:

+86-755-28503874
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
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Monolithic Power Systems Inc.
Monolithic Power Systems Inc.
Founded in 1997, Monolithic Power Systems Inc. is a globally leading semiconductor company focused on the design, research and development, manufacturing, and sales of high-performance analog integrated circuits and mixed signal integrated circuits, founded...
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