LN60A01ES-LF

Monolithic Power Systems Inc. LN60A01ES-LF

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  • LN60A01ES-LF
  • Monolithic Power Systems Inc.
  • MOSFET 3N-CH 600V 0.08A 8SOIC
  • Transistors - FETs, MOSFETs - Arrays
  • LN60A01ES-LF Datasheet
  • 8-SOIC (0.154", 3.90mm Width)
  • 8-SOIC (0.154", 3.90mm Width)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 5060
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates

What is LN60A01ES-LF

Monolithic Power Systems Inc. Part Number LN60A01ES-LFTransistors - FETs, MOSFETs - Arrays), developed and manufactured by Monolithic Power Systems Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.

LN60A01ES-LF is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.

LN60A01ES-LF Specifications

  • Part NumberLN60A01ES-LF
  • CategoryTransistors - FETs, MOSFETs - Arrays
  • ManufacturerMonolithic Power Systems Inc.
  • DescriptionMOSFET 3N-CH 600V 0.08A 8SOIC
  • Package8-SOIC (0.154", 3.90mm Width)
  • Series-
  • Operating Temperature-20°C ~ 125°C (TJ)
  • Package / Case8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package8-SOIC
  • Power - Max1.3W
  • FET Type3 N-Channel, Common Gate
  • FET FeatureStandard
  • Drain to Source Voltage (Vdss)600V
  • Current - Continuous Drain (Id) @ 25°C80mA
  • Rds On (Max) @ Id, Vgs190 Ohm @ 10mA, 10V
  • Vgs(th) (Max) @ Id1.2V @ 250µA

Application of LN60A01ES-LF

FETs and MOSFET Arrays (FETs, MOSFETs) are widely used in various fields. In the field of communication, they are widely used in key components such as RF front ends, signal amplifiers and filters to improve the transmission efficiency and signal quality of communication systems. In the computer field, FET and MOSFET array as an important part of CPU, GPU and other core processors, assume the key role of data processing and computing tasks. In addition, in automotive electronics, industrial automation, medical equipment and other fields, FET and MOSFET arrays also play an important role, such as for motor drive control, power management, sensor signal processing and so on.

LN60A01ES-LF Datasheet

LN60A01ES-LF Datasheet , 8-SOIC (0.154", 3.90mm Width),-20°C ~ 125°C (TJ),8-SOIC (0.154", 3.90mm Width),8-SOIC,1.3W,3 N-Channel, Common Gate,Standard,600V,80mA,190 Ohm @ 10mA, 10V,1.2V @ 250µA

LN60A01ES-LF Classification

Transistors - FETs, MOSFETs - Arrays

FETs and MOSFET arrays (FETS, MOSFETs-Arrays) are composed of multiple Field-Effect transistors. FET) or Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is an integrated circuit module. This array design provides high power processing capabilities while maintaining good thermal management and control characteristics. An FET or MOSFET array typically includes multiple transistors that can be connected in series, parallel, or in combination to meet specific current and voltage requirements.

FAQ about Transistors - FETs, MOSFETs - Arrays

  • 1. What are the two types of MOSFET transistors?

    There are two main types of MOSFET transistors: enhancement MOSFET and depletion MOSFET.
    Enhancement MOSFET
    When the gate voltage of the enhancement MOSFET is zero, there is no conductive channel between the source and the drain. Only when the gate voltage reaches a certain threshold voltage, the conductive channel will be formed and the current will begin to flow. This type of MOSFET requires a positive voltage to be applied to the gate to turn on, and is in a high-resistance state when no voltage is applied.
    Depletion-type MOSFET
    When the gate voltage of a depletion-type MOSFET is zero, a conductive channel already exists between the source and drain. Applying a negative gate voltage can reduce or deplete the conductive channel, thereby controlling the current. This type of MOSFET is already turned on when no voltage is applied, and needs to be turned off by applying a negative voltage.

  • 2. Why do we use MOSFET instead of FET?

    The main reason why we use MOSFET instead of FET is the characteristics and advantages of MOSFET.
    MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) is a voltage-controlled device with the following main features and advantages:
    Fast switching speed: MOSFET has a very fast switching speed, which makes it perform well in high-frequency applications. Its fast switching characteristics make MOSFET widely used in switching power supplies, motor control, inverters and other fields.
    High input impedance: The input impedance of MOSFET is very high, which means that it is less sensitive to external interference during operation and can provide more stable performance.
    Low noise: Since MOSFET is a voltage-controlled device, it generates less noise during operation, which is suitable for noise-sensitive application scenarios.
    Low drive power: MOSFET has a small drive power, which means that the design of the drive circuit can be simpler and more efficient.

  • 3. Is MOSFET a transistor?

    MOSFET is a type of transistor. MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a metal oxide semiconductor field effect transistor, which is a type of field effect transistor.
    Basic concepts and characteristics of MOSFET
    MOSFET is an insulated gate field effect transistor that mainly controls the conductive channel between the source and the drain through the gate voltage. Its working principle is to apply voltage to the gate to form an electric field, thereby controlling the charge distribution on the surface of the semiconductor and thus controlling the flow of current. MOSFET has the advantages of high input impedance, low noise, and good frequency characteristics, and is widely used in analog circuits and digital circuits.

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Do you have any questions about LN60A01ES-LF ?
Feel free to contact us:

+86-755-28503874
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Email first will be appreciative )

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Monolithic Power Systems Inc.
Monolithic Power Systems Inc.
Founded in 1997, Monolithic Power Systems Inc. is a globally leading semiconductor company focused on the design, research and development, manufacturing, and sales of high-performance analog integrated circuits and mixed signal integrated circuits, founded...
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