Vishay Siliconix SI7106DN-T1-GE3
- SI7106DN-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 20V 12.5A PPAK1212-8
- Transistors - FETs, MOSFETs - Single
- SI7106DN-T1-GE3 Datasheet
- PowerPAK® 1212-8
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 8142
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SI7106DN-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 20V 12.5A PPAK1212-8 |
Package Cut Tape (CT) |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® 1212-8 |
Supplier Device Package PowerPAK® 1212-8 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1.5W (Ta) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 20 V |
Current - Continuous Drain (Id) @ 25°C 12.5A (Ta) |
Rds On (Max) @ Id, Vgs 6.2mOhm @ 19.5A, 4.5V |
Vgs(th) (Max) @ Id 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds - |
Vgs (Max) ±12V |
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V |
Package_case PowerPAK® 1212-8 |
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Vishay Siliconix
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