SQD19P06-60L_GE3

Vishay Siliconix SQD19P06-60L_GE3

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  • SQD19P06-60L_GE3
  • Vishay Siliconix
  • MOSFET P-CH 60V 20A TO252
  • Transistors - FETs, MOSFETs - Single
  • SQD19P06-60L_GE3 Datasheet
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1482
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SQD19P06-60L_GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 60V 20A TO252
Package
Tape & Reel (TR)
Series
Automotive, AEC-Q101, TrenchFET®
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252AA
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
46W (Tc)
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Rds On (Max) @ Id, Vgs
55mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1490 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

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Vishay Siliconix
Vishay Siliconix
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