SQD19P06-60L_GE3

Vishay Siliconix SQD19P06-60L_GE3

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  • SQD19P06-60L_GE3
  • Vishay Siliconix
  • MOSFET P-CH 60V 20A TO252
  • Transistors - FETs, MOSFETs - Single
  • SQD19P06-60L_GE3 Datasheet
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1482
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
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What is SQD19P06-60L_GE3

Vishay Siliconix Part Number SQD19P06-60L_GE3（Transistors - FETs, MOSFETs - Single）, developed and manufactured by Vishay Siliconix, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.

SQD19P06-60L_GE3 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.

SQD19P06-60L_GE3 Specifications

  • Part NumberSQD19P06-60L_GE3
  • CategoryTransistors - FETs, MOSFETs - Single
  • ManufacturerVishay Siliconix
  • DescriptionMOSFET P-CH 60V 20A TO252
  • PackageTape & Reel (TR)
  • SeriesAutomotive, AEC-Q101, TrenchFET®
  • Operating Temperature-55°C ~ 175°C (TJ)
  • Mounting TypeSurface Mount
  • Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device PackageTO-252AA
  • TechnologyMOSFET (Metal Oxide)
  • Power Dissipation (Max)46W (Tc)
  • FET TypeP-Channel
  • FET Feature-
  • Drain to Source Voltage (Vdss)60 V
  • Current - Continuous Drain (Id) @ 25°C20A (Tc)
  • Rds On (Max) @ Id, Vgs55mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds1490 pF @ 25 V
  • Vgs (Max)±20V
  • Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

Application of SQD19P06-60L_GE3

FET and MOSFET-single (FETs, MOSFETs-Single) application field is extremely wide, almost covers the core part of all electronic devices. In the field of consumer electronics, from smartphones, tablets to wearable devices, FETs and MOSFETs are key components for signal processing and power management, ensuring the normal operation of devices and efficient energy consumption. In industrial control systems, they are widely used in the fields of motor drive, automated production lines and process control, improving production efficiency and system stability. In addition, in automotive electronics, medical equipment, aerospace and other high-tech fields, FET and MOSFET also play an irreplaceable role. In automotive electronics, for example, they are used in engine management systems, safety systems, and entertainment systems. In medical equipment, it is used for key links such as signal amplification and power control of precision instruments.

SQD19P06-60L_GE3 Datasheet

SQD19P06-60L_GE3 Datasheet , Tape & Reel (TR),Automotive, AEC-Q101, TrenchFET®,-55°C ~ 175°C (TJ),Surface Mount,TO-252-3, DPak (2 Leads + Tab), SC-63,TO-252AA,MOSFET (Metal Oxide),46W (Tc),P-Channel,60 V,20A (Tc),55mOhm @ 19A

SQD19P06-60L_GE3 Classification

Transistors - FETs, MOSFETs - Single

FET (field effect transistor) is an electronic device that controls the flow of current in a semiconductor based on the electric field effect. It is mainly composed of three ends: Gate, Source and Drain, and the current between source and drain is modulated by changing the grid voltage.MOSFET (metal oxide semiconductor field effect transistor) is a special type of FET, which plays an important role in electronic design because of its high input impedance, low noise and low power consumption. Mosfet-single also refers to a single MOSFET element or a simple circuit unit with it as the core, which further improves performance stability and application range on the basis of retaining the basic characteristics of FET.

FAQ about Transistors - FETs, MOSFETs - Single

  • 1. What is the difference between a MOSFET and a transistor?

    Transistors are usually bipolar (BJT) and rely on current control, while MOSFETs are voltage controlled.
    BJTs have a higher input impedance, but MOSFETs usually have a higher input impedance.
    MOSFETs are better suited for high-frequency operation because they switch faster.

  • 2. What is the difference between a JFET and a MOSFET?

    A JFET (junction field effect transistor) does not have an insulating layer between the gate and the channel, but instead has a PN junction.
    JFETs generally only work in depletion mode, while MOSFETs can be of two types: enhancement mode and depletion mode.
    The input impedance of a JFET is lower than that of a MOSFET.

  • 3. What role does a MOSFET play in a motor?

    MOSFETs are often used for functions such as speed control, direction control, and soft start/stop of motors. They can respond quickly to control signals and provide precise current control.

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Do you have any questions about SQD19P06-60L_GE3 ?
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+86-755-28503874
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
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Vishay Siliconix
Vishay Siliconix
In 1996, Vishay Siliconix became a part of Vishay. Vishay Siliconix is a company that manufactures semiconductor devices and integrated circuits.
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