SIR166DP-T1-GE3

Vishay Siliconix SIR166DP-T1-GE3

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  • SIR166DP-T1-GE3
  • Vishay Siliconix
  • MOSFET N-CH 30V 40A PPAK SO-8
  • Transistors - FETs, MOSFETs - Single
  • SIR166DP-T1-GE3 Datasheet
  • PowerPAK® SO-8
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4174
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
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What is SIR166DP-T1-GE3

Vishay Siliconix Part Number SIR166DP-T1-GE3（Transistors - FETs, MOSFETs - Single）, developed and manufactured by Vishay Siliconix, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.

SIR166DP-T1-GE3 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.

SIR166DP-T1-GE3 Specifications

  • Part NumberSIR166DP-T1-GE3
  • CategoryTransistors - FETs, MOSFETs - Single
  • ManufacturerVishay Siliconix
  • DescriptionMOSFET N-CH 30V 40A PPAK SO-8
  • PackageTape & Reel (TR)
  • SeriesTrenchFET®
  • Operating Temperature-55°C ~ 150°C (TJ)
  • Mounting TypeSurface Mount
  • Package / CasePowerPAK® SO-8
  • Supplier Device PackagePowerPAK® SO-8
  • TechnologyMOSFET (Metal Oxide)
  • Power Dissipation (Max)5W (Ta), 48W (Tc)
  • FET TypeN-Channel
  • FET Feature-
  • Drain to Source Voltage (Vdss)30 V
  • Current - Continuous Drain (Id) @ 25°C40A (Tc)
  • Rds On (Max) @ Id, Vgs3.2mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs77 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds3340 pF @ 15 V
  • Vgs (Max)±20V
  • Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

Application of SIR166DP-T1-GE3

FET and MOSFET-single (FETs, MOSFETs-Single) application field is extremely wide, almost covers the core part of all electronic devices. In the field of consumer electronics, from smartphones, tablets to wearable devices, FETs and MOSFETs are key components for signal processing and power management, ensuring the normal operation of devices and efficient energy consumption. In industrial control systems, they are widely used in the fields of motor drive, automated production lines and process control, improving production efficiency and system stability. In addition, in automotive electronics, medical equipment, aerospace and other high-tech fields, FET and MOSFET also play an irreplaceable role. In automotive electronics, for example, they are used in engine management systems, safety systems, and entertainment systems. In medical equipment, it is used for key links such as signal amplification and power control of precision instruments.

SIR166DP-T1-GE3 Datasheet

SIR166DP-T1-GE3 Datasheet , Tape & Reel (TR),TrenchFET®,-55°C ~ 150°C (TJ),Surface Mount,PowerPAK® SO-8,PowerPAK® SO-8,MOSFET (Metal Oxide),5W (Ta), 48W (Tc),N-Channel,30 V,40A (Tc),3.2mOhm @ 15A, 10V,2.2V @ 250µA,77 nC @ 10

SIR166DP-T1-GE3 Classification

Transistors - FETs, MOSFETs - Single

FET (field effect transistor) is an electronic device that controls the flow of current in a semiconductor based on the electric field effect. It is mainly composed of three ends: Gate, Source and Drain, and the current between source and drain is modulated by changing the grid voltage.MOSFET (metal oxide semiconductor field effect transistor) is a special type of FET, which plays an important role in electronic design because of its high input impedance, low noise and low power consumption. Mosfet-single also refers to a single MOSFET element or a simple circuit unit with it as the core, which further improves performance stability and application range on the basis of retaining the basic characteristics of FET.

FAQ about Transistors - FETs, MOSFETs - Single

  • 1. What are the main uses of MOSFETs?

    As a switch: used to quickly turn a circuit on or off.
    As an amplifier: amplifies signals in analog circuits.
    As a power switch in applications such as power management, motor control, inverters, etc.

  • 2. What is the difference between a MOSFET and a transistor?

    Transistors are usually bipolar (BJT) and rely on current control, while MOSFETs are voltage controlled.
    BJTs have a higher input impedance, but MOSFETs usually have a higher input impedance.
    MOSFETs are better suited for high-frequency operation because they switch faster.

  • 3. What are the advantages of MOSFETs?

    High input impedance.
    Low noise.
    Low power consumption.
    Fast switching characteristics.
    Easy to integrate.
    High reliability and durability.

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Jinftry, Your most trustworthy component supplier, welcome to send us the inquiry, thank you!

Do you have any questions about SIR166DP-T1-GE3 ?
Feel free to contact us:

+86-755-28503874
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Email first will be appreciative )

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Vishay Siliconix
Vishay Siliconix
In 1996, Vishay Siliconix became a part of Vishay. Vishay Siliconix is a company that manufactures semiconductor devices and integrated circuits.
Vishay Siliconix products mainly include high-performance power MOSFETs, insulated gate bipolar transistors, power...
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