Vishay Siliconix SI8425DB-T1-E1
- SI8425DB-T1-E1
- Vishay Siliconix
- MOSFET P-CH 20V 4WLCSP
- Transistors - FETs, MOSFETs - Single
- SI8425DB-T1-E1 Datasheet
- 4-UFBGA, WLCSP
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 7483
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SI8425DB-T1-E1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET P-CH 20V 4WLCSP |
Package Jinftry-Reel® |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 4-UFBGA, WLCSP |
Supplier Device Package 4-WLCSP (1.6x1.6) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1.1W (Ta), 2.7W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 20 V |
Current - Continuous Drain (Id) @ 25°C 5.9A (Ta) |
Rds On (Max) @ Id, Vgs 23mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 10 V |
Vgs (Max) ±10V |
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V |
Package_case 4-UFBGA, WLCSP |
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Vishay Siliconix
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