Vishay Siliconix SI8461DB-T2-E1
- SI8461DB-T2-E1
- Vishay Siliconix
- MOSFET P-CH 20V 4MICROFOOT
- Transistors - FETs, MOSFETs - Single
- SI8461DB-T2-E1 Datasheet
- 4-XFBGA, CSPBGA
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 2301
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SI8461DB-T2-E1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET P-CH 20V 4MICROFOOT |
Package Tape & Reel (TR) |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 4-XFBGA, CSPBGA |
Supplier Device Package 4-Microfoot |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 780mW (Ta), 1.8W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 20 V |
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) |
Rds On (Max) @ Id, Vgs 100mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 8 V |
Input Capacitance (Ciss) (Max) @ Vds 610 pF @ 10 V |
Vgs (Max) ±8V |
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V |
Package_case 4-XFBGA, CSPBGA |
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Vishay Siliconix
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