Vishay Siliconix SI8810EDB-T2-E1
- SI8810EDB-T2-E1
- Vishay Siliconix
- MOSFET N-CH 20V 2.1A MICROFOOT
- Transistors - FETs, MOSFETs - Single
- SI8810EDB-T2-E1 Datasheet
- 4-XFBGA
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 4704
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SI8810EDB-T2-E1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 20V 2.1A MICROFOOT |
Package Jinftry-Reel® |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 4-XFBGA |
Supplier Device Package 4-Microfoot |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 500mW (Ta) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 20 V |
Current - Continuous Drain (Id) @ 25°C 2.1A (Ta) |
Rds On (Max) @ Id, Vgs 72mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 8 V |
Input Capacitance (Ciss) (Max) @ Vds 245 pF @ 10 V |
Vgs (Max) ±8V |
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V |
Package_case 4-XFBGA |
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