Vishay Siliconix SIE876DF-T1-GE3
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- SIE876DF-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 60V 60A 10POLARPAK
- Transistors - FETs, MOSFETs - Single
- SIE876DF-T1-GE3 Datasheet
- 10-PolarPAK® (L)
- Tube
-
Lead free / RoHS Compliant - 26679
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
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| Part Number SIE876DF-T1-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 60V 60A 10POLARPAK |
| Package Tube |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 10-PolarPAK® (L) |
| Supplier Device Package 10-PolarPAK® (L) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 5.2W (Ta), 125W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 60 V |
| Current - Continuous Drain (Id) @ 25°C 60A (Tc) |
| Rds On (Max) @ Id, Vgs 6.1mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id 4.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 30 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case 10-PolarPAK® (L) |
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