SIHH24N65EF-T1-GE3

Vishay Siliconix SIHH24N65EF-T1-GE3

The picture is for reference only, please refer to the product specification

  • SIHH24N65EF-T1-GE3
  • Vishay Siliconix
  • MOSFET N-CH 650V 23A PPAK 8 X 8
  • Transistors - FETs, MOSFETs - Single
  • SIHH24N65EF-T1-GE3 Datasheet
  • 8-PowerTDFN
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3642
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SIHH24N65EF-T1-GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 650V 23A PPAK 8 X 8
Package
Tube
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PowerPAK® 8 x 8
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
202W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
23A (Tc)
Rds On (Max) @ Id, Vgs
158mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2780 pF @ 100 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
8-PowerTDFN

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+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
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Vishay Siliconix
Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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