Vishay Siliconix SIS776DN-T1-GE3
- SIS776DN-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 30V 35A 1212-8
- Transistors - FETs, MOSFETs - Single
- SIS776DN-T1-GE3 Datasheet
- PowerPAK® 1212-8
- PowerPAK? 1212-8
- Lead free / RoHS Compliant
- 13952
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SIS776DN-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 30V 35A 1212-8 |
Package PowerPAK? 1212-8 |
Series SkyFET?, TrenchFET? |
Operating Temperature -50°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® 1212-8 |
Supplier Device Package PowerPAK® 1212-8 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3.8W (Ta), 52W (Tc) |
FET Type N-Channel |
FET Feature Schottky Diode (Body) |
Drain to Source Voltage (Vdss) 30V |
Current - Continuous Drain (Id) @ 25°C 35A (Tc) |
Rds On (Max) @ Id, Vgs 6.2 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 1360pF @ 15V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Vgs (Max) ±20V |
Package_case PowerPAK® 1212-8 |
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Vishay Siliconix
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