Vishay Siliconix SISA10DN-T1-GE3
- SISA10DN-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 30V 30A PPAK1212-8
- Transistors - FETs, MOSFETs - Single
- SISA10DN-T1-GE3 Datasheet
- PowerPAK® 1212-8
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 1472
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SISA10DN-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 30V 30A PPAK1212-8 |
Package Jinftry-Reel® |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® 1212-8 |
Supplier Device Package PowerPAK® 1212-8 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3.6W (Ta), 39W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 30A (Tc) |
Rds On (Max) @ Id, Vgs 3.7mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 2425 pF @ 15 V |
Vgs (Max) +20V, -16V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case PowerPAK® 1212-8 |
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