Toshiba Semiconductor and Storage SSM6K217FE,LF
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- SSM6K217FE,LF
- Toshiba Semiconductor and Storage
- MOSFET N-CH 40V 1.8A ES6
- Transistors - FETs, MOSFETs - Single
- SSM6K217FE,LF Datasheet
- SOT-563, SOT-666
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 14157
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number SSM6K217FE,LF |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description MOSFET N-CH 40V 1.8A ES6 |
| Package Cut Tape (CT) |
| Series U-MOSVII-H |
| Operating Temperature 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case SOT-563, SOT-666 |
| Supplier Device Package ES6 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 500mW (Ta) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 40 V |
| Current - Continuous Drain (Id) @ 25°C 1.8A (Ta) |
| Rds On (Max) @ Id, Vgs 195mOhm @ 1A, 8V |
| Vgs(th) (Max) @ Id 1.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 1.1 nC @ 4.2 V |
| Input Capacitance (Ciss) (Max) @ Vds 130 pF @ 10 V |
| Vgs (Max) ±12V |
| Drive Voltage (Max Rds On, Min Rds On) 1.8V, 8V |
| Package_case SOT-563, SOT-666 |
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