STGP4M65DF2

STMicroelectronics STGP4M65DF2

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  • STGP4M65DF2
  • STMicroelectronics
  • IGBT M SERIES 650V 4A LOW LOSS
  • Transistors - IGBTs - Single
  • STGP4M65DF2 Datasheet
  • TO-220-3
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2837
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
STGP4M65DF2
Category
Transistors - IGBTs - Single
Manufacturer
STMicroelectronics
Description
IGBT M SERIES 650V 4A LOW LOSS
Package
Tube
Series
M
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Power - Max
68 W
Input Type
Standard
Reverse Recovery Time (trr)
133 ns
Current - Collector (Ic) (Max)
8 A
Voltage - Collector Emitter Breakdown (Max)
650 V
IGBT Type
Trench Field Stop
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 4A
Gate Charge
15.2 nC
Td (on/off) @ 25°C
12ns/86ns
Test Condition
400V, 4A, 47Ohm, 15V
Current - Collector Pulsed (Icm)
16 A
Switching Energy
40µJ (on), 136µJ (off)
Package_case
TO-220-3

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STMicroelectronics
STMicroelectronics
STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual ...
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