STMicroelectronics STGW80H65DFB-4
- STGW80H65DFB-4
- STMicroelectronics
- IGBT BIPO 650V 80A TO247
- Transistors - IGBTs - Single
- STGW80H65DFB-4 Datasheet
- TO-247-4
- Tube
- Lead free / RoHS Compliant
- 3386
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number STGW80H65DFB-4 |
Category Transistors - IGBTs - Single |
Manufacturer STMicroelectronics |
Description IGBT BIPO 650V 80A TO247 |
Package Tube |
Series - |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-4 |
Supplier Device Package TO-247-4 |
Power - Max 469 W |
Input Type Standard |
Reverse Recovery Time (trr) 85 ns |
Current - Collector (Ic) (Max) 120 A |
Voltage - Collector Emitter Breakdown (Max) 650 V |
IGBT Type Trench Field Stop |
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 80A |
Gate Charge 414 nC |
Td (on/off) @ 25°C 84ns/280ns |
Test Condition 400V, 80A, 10Ohm, 15V |
Current - Collector Pulsed (Icm) 240 A |
Switching Energy 2.1mJ (on), 1.5mJ (off) |
Package_case TO-247-4 |
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