TP65H300G4LSG

Transphorm TP65H300G4LSG

The picture is for reference only, please refer to the product specification

  • TP65H300G4LSG
  • Transphorm
  • GANFET N-CH 650V 6.5A 3PQFN
  • Transistors - FETs, MOSFETs - Single
  • TP65H300G4LSG Datasheet
  • 3-PowerDFN
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4583
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
TP65H300G4LSG
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Transphorm
Description
GANFET N-CH 650V 6.5A 3PQFN
Package
Cut Tape (CT)
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
3-PowerDFN
Supplier Device Package
3-PQFN (8x8)
Technology
GaNFET (Gallium Nitride)
Power Dissipation (Max)
21W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
6.5A (Tc)
Rds On (Max) @ Id, Vgs
312mOhm @ 5A, 8V
Vgs(th) (Max) @ Id
2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
9.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 400 V
Vgs (Max)
±18V
Drive Voltage (Max Rds On, Min Rds On)
8V
Package_case
3-PowerDFN

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