TPN4R203NC,L1Q

Toshiba Semiconductor and Storage TPN4R203NC,L1Q

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  • TPN4R203NC,L1Q
  • Toshiba Semiconductor and Storage
  • MOSFET N CH 30V 23A 8TSON-ADV
  • Transistors - FETs, MOSFETs - Single
  • TPN4R203NC,L1Q Datasheet
  • 8-PowerVDFN
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 14603
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
TPN4R203NC,L1Q
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N CH 30V 23A 8TSON-ADV
Package
Cut Tape (CT)
Series
U-MOSVIII
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
8-TSON Advance (3.1x3.1)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
700mW (Ta), 22W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
23A (Ta)
Rds On (Max) @ Id, Vgs
4.2mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id
2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 15 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
8-PowerVDFN

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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