TRS12N65FB,S1Q

Toshiba Semiconductor and Storage TRS12N65FB,S1Q

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  • TRS12N65FB,S1Q
  • Toshiba Semiconductor and Storage
  • SIC SBD TO-247 V=650 IF=12A
  • Diodes - Rectifiers - Arrays
  • TRS12N65FB,S1Q Datasheet
  • TO-247-3
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4176
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
TRS12N65FB,S1Q
Category
Diodes - Rectifiers - Arrays
Manufacturer
Toshiba Semiconductor and Storage
Description
SIC SBD TO-247 V=650 IF=12A
Package
Tube
Series
-
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247
Diode Type
Silicon Carbide Schottky
Voltage - Forward (Vf) (Max) @ If
1.6 V @ 6 A
Current - Reverse Leakage @ Vr
30 µA @ 650 V
Diode Configuration
1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io) (per Diode)
6A (DC)
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Operating Temperature - Junction
175°C
Package_case
TO-247-3

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage is a company dedicated to the research, development, production, and sales of semiconductor and storage solutions.
In 1875, Toshiba Semiconductor and Storage was founded in Tokyo, Japan. The company's products...
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