TSM080NB03CR RLG

Taiwan Semiconductor Corporation TSM080NB03CR RLG

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  • TSM080NB03CR RLG
  • Taiwan Semiconductor Corporation
  • MOSFET N-CH 30V 14A/59A 8PDFN
  • Transistors - FETs, MOSFETs - Single
  • TSM080NB03CR RLG Datasheet
  • 8-PowerTDFN
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3267
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
TSM080NB03CR RLG
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Taiwan Semiconductor Corporation
Description
MOSFET N-CH 30V 14A/59A 8PDFN
Package
Cut Tape (CT)
Series
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-PDFN (5x6)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.1W (Ta), 55.6W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs
8mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1097 pF @ 15 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
8-PowerTDFN

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568248857, 827259012, 316249462
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