Rohm Semiconductor TT8U2TCR
- TT8U2TCR
- Rohm Semiconductor
- MOSFET P-CH 20V 2.4A 8TSST
- Transistors - FETs, MOSFETs - Single
- TT8U2TCR Datasheet
- 8-SMD, Flat Lead
- Tape & Reel (TR)
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Lead free / RoHS Compliant - 3310
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What is TT8U2TCR
Rohm Semiconductor Part Number TT8U2TCR(Transistors - FETs, MOSFETs - Single), developed and manufactured by Rohm Semiconductor, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
TT8U2TCR is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
TT8U2TCR Specifications
- Part NumberTT8U2TCR
- CategoryTransistors - FETs, MOSFETs - Single
- ManufacturerRohm Semiconductor
- DescriptionMOSFET P-CH 20V 2.4A 8TSST
- PackageTape & Reel (TR)
- Series-
- Operating Temperature150°C (TJ)
- Mounting TypeSurface Mount
- Package / Case8-SMD, Flat Lead
- Supplier Device Package8-TSST
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation (Max)1.25W (Ta)
- FET TypeP-Channel
- FET FeatureSchottky Diode (Isolated)
- Drain to Source Voltage (Vdss)20 V
- Current - Continuous Drain (Id) @ 25°C2.4A (Ta)
- Rds On (Max) @ Id, Vgs105mOhm @ 2.4A, 4.5V
- Vgs(th) (Max) @ Id1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs6.7 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds850 pF @ 10 V
- Vgs (Max)±10V
- Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Application of TT8U2TCR
TT8U2TCR Datasheet
TT8U2TCR Datasheet , Tape & Reel (TR),150°C (TJ),Surface Mount,8-SMD, Flat Lead,8-TSST,MOSFET (Metal Oxide),1.25W (Ta),P-Channel,Schottky Diode (Isolated),20 V,2.4A (Ta),105mOhm @ 2.4A, 4.5V,1V @ 1mA,6.7 nC @ 4.5 V,850 pF @ 10
TT8U2TCR Classification
Transistors - FETs, MOSFETs - Single
FAQ about Transistors - FETs, MOSFETs - Single
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1. How does a MOSFET work?
When a sufficient forward voltage is applied to the gate relative to the source, a conductive channel is formed on the silicon surface under the insulating layer, allowing current to flow from the source to the drain. For an N-channel enhancement MOSFET, the channel begins to conduct when Vgs (gate-source voltage) exceeds the threshold voltage Vth; for a P-channel MOSFET, the opposite is true.
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2. How to connect a MOSFET?
The source is usually connected to a lower potential (such as ground).
The drain is connected to the load or power supply.
The gate is connected to the control signal through an appropriate drive circuit.
Sometimes a small resistor is added between the gate and the source to prevent oscillation. -
3. What is the difference between a JFET and a MOSFET?
A JFET (junction field effect transistor) does not have an insulating layer between the gate and the channel, but instead has a PN junction.
JFETs generally only work in depletion mode, while MOSFETs can be of two types: enhancement mode and depletion mode.
The input impedance of a JFET is lower than that of a MOSFET.
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