TT8U2TCR

Rohm Semiconductor TT8U2TCR

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  • TT8U2TCR
  • Rohm Semiconductor
  • MOSFET P-CH 20V 2.4A 8TSST
  • Transistors - FETs, MOSFETs - Single
  • TT8U2TCR Datasheet
  • 8-SMD, Flat Lead
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3310
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates

What is TT8U2TCR

Rohm Semiconductor Part Number TT8U2TCRTransistors - FETs, MOSFETs - Single), developed and manufactured by Rohm Semiconductor, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.

TT8U2TCR is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.

TT8U2TCR Specifications

  • Part NumberTT8U2TCR
  • CategoryTransistors - FETs, MOSFETs - Single
  • ManufacturerRohm Semiconductor
  • DescriptionMOSFET P-CH 20V 2.4A 8TSST
  • PackageTape & Reel (TR)
  • Series-
  • Operating Temperature150°C (TJ)
  • Mounting TypeSurface Mount
  • Package / Case8-SMD, Flat Lead
  • Supplier Device Package8-TSST
  • TechnologyMOSFET (Metal Oxide)
  • Power Dissipation (Max)1.25W (Ta)
  • FET TypeP-Channel
  • FET FeatureSchottky Diode (Isolated)
  • Drain to Source Voltage (Vdss)20 V
  • Current - Continuous Drain (Id) @ 25°C2.4A (Ta)
  • Rds On (Max) @ Id, Vgs105mOhm @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs6.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds850 pF @ 10 V
  • Vgs (Max)±10V
  • Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V

Application of TT8U2TCR

FET and MOSFET-single (FETs, MOSFETs-Single) application field is extremely wide, almost covers the core part of all electronic devices. In the field of consumer electronics, from smartphones, tablets to wearable devices, FETs and MOSFETs are key components for signal processing and power management, ensuring the normal operation of devices and efficient energy consumption. In industrial control systems, they are widely used in the fields of motor drive, automated production lines and process control, improving production efficiency and system stability. In addition, in automotive electronics, medical equipment, aerospace and other high-tech fields, FET and MOSFET also play an irreplaceable role. In automotive electronics, for example, they are used in engine management systems, safety systems, and entertainment systems. In medical equipment, it is used for key links such as signal amplification and power control of precision instruments.

TT8U2TCR Datasheet

TT8U2TCR Datasheet , Tape & Reel (TR),150°C (TJ),Surface Mount,8-SMD, Flat Lead,8-TSST,MOSFET (Metal Oxide),1.25W (Ta),P-Channel,Schottky Diode (Isolated),20 V,2.4A (Ta),105mOhm @ 2.4A, 4.5V,1V @ 1mA,6.7 nC @ 4.5 V,850 pF @ 10

TT8U2TCR Classification

Transistors - FETs, MOSFETs - Single

FET (field effect transistor) is an electronic device that controls the flow of current in a semiconductor based on the electric field effect. It is mainly composed of three ends: Gate, Source and Drain, and the current between source and drain is modulated by changing the grid voltage.MOSFET (metal oxide semiconductor field effect transistor) is a special type of FET, which plays an important role in electronic design because of its high input impedance, low noise and low power consumption. Mosfet-single also refers to a single MOSFET element or a simple circuit unit with it as the core, which further improves performance stability and application range on the basis of retaining the basic characteristics of FET.

FAQ about Transistors - FETs, MOSFETs - Single

  • 1. How does a MOSFET work?

    When a sufficient forward voltage is applied to the gate relative to the source, a conductive channel is formed on the silicon surface under the insulating layer, allowing current to flow from the source to the drain. For an N-channel enhancement MOSFET, the channel begins to conduct when Vgs (gate-source voltage) exceeds the threshold voltage Vth; for a P-channel MOSFET, the opposite is true.

  • 2. How to connect a MOSFET?


    The source is usually connected to a lower potential (such as ground).
    The drain is connected to the load or power supply.
    The gate is connected to the control signal through an appropriate drive circuit.
    Sometimes a small resistor is added between the gate and the source to prevent oscillation.

  • 3. What is the difference between a JFET and a MOSFET?

    A JFET (junction field effect transistor) does not have an insulating layer between the gate and the channel, but instead has a PN junction.
    JFETs generally only work in depletion mode, while MOSFETs can be of two types: enhancement mode and depletion mode.
    The input impedance of a JFET is lower than that of a MOSFET.

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+86-755-28503874
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568248857, 827259012, 316249462
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Rohm Semiconductor
Rohm Semiconductor
Rohm Semiconductor is a semiconductor and electronic component manufacturing company.
On September 17, 1958, Rohm Semiconductor was founded in Kyoto, Japan. The company's products mainly include analog integrated circuits, power semiconductor devices, sensors, advanced packaging...
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