Vishay Semiconductor - Diodes Division UF8BT-E3/4W
- UF8BT-E3/4W
- Vishay Semiconductor - Diodes Division
- DIODE GEN PURP 100V 8A ITO220AC
- Diodes - Rectifiers - Single
- UF8BT-E3/4W Datasheet
- TO-220-2 Full Pack, Isolated Tab
- Tube
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What is UF8BT-E3/4W
Vishay Semiconductor - Diodes Division Part Number UF8BT-E3/4W(Diodes - Rectifiers - Single), developed and manufactured by Vishay Semiconductor - Diodes Division, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
UF8BT-E3/4W is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
UF8BT-E3/4W Specifications
- Part NumberUF8BT-E3/4W
- CategoryDiodes - Rectifiers - Single
- ManufacturerVishay Semiconductor - Diodes Division
- DescriptionDIODE GEN PURP 100V 8A ITO220AC
- PackageTube
- Series-
- Mounting TypeThrough Hole
- Package / CaseTO-220-2 Full Pack, Isolated Tab
- Supplier Device PackageITO-220AC
- Diode TypeStandard
- Current - Average Rectified (Io)8A
- Voltage - Forward (Vf) (Max) @ If1.02 V @ 8 A
- Current - Reverse Leakage @ Vr10 µA @ 100 V
- Capacitance @ Vr, F-
- Voltage - DC Reverse (Vr) (Max)100 V
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)20 ns
- Operating Temperature - Junction-55°C ~ 150°C
Application of UF8BT-E3/4W
UF8BT-E3/4W Datasheet
UF8BT-E3/4W Datasheet , Tube,Through Hole,TO-220-2 Full Pack, Isolated Tab,ITO-220AC,Standard,8A,1.02 V @ 8 A,10 µA @ 100 V,100 V,Fast Recovery =< 500ns, > 200mA (Io),20 ns,-55°C ~ 150°C
UF8BT-E3/4W Classification
Diodes - Rectifiers - Single
FAQ about Diodes - Rectifiers - Single
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1. What is forward voltage drop?
Forward voltage drop refers to the voltage drop generated when the current passes through a diode when it is conducting. The forward voltage drop of silicon rectifier diodes is usually around 0.7V, while the forward voltage drop of Schottky diodes is usually lower, between 0.2V and 0.3V.
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2. What is the difference between Schottky diodes and traditional silicon rectifier diodes?
Schottky diodes have a lower forward voltage drop (typically 0.2V to 0.3V) and faster switching speed, making them suitable for high-frequency applications. However, their reverse voltage is relatively low and is typically used in circuits with lower voltages.
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3. Can a single rectifier diode be used for high-frequency applications?
Traditional silicon rectifier diodes are not suitable for high-frequency applications because their reverse recovery time is relatively long. For high-frequency applications, fast recovery diodes or Schottky diodes are typically used to reduce switching losses and improve efficiency.
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