Vishay Semiconductor - Diodes Division VS-GB150YG120NT
- VS-GB150YG120NT
- Vishay Semiconductor - Diodes Division
- IGBT MOD 1200V 182A ECONO3 4PACK
- Transistors - IGBTs - Modules
- VS-GB150YG120NT Datasheet
- Module
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- 26500
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Part Number VS-GB150YG120NT |
Category Transistors - IGBTs - Modules |
Manufacturer Vishay Semiconductor - Diodes Division |
Description IGBT MOD 1200V 182A ECONO3 4PACK |
Package Bulk |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Chassis Mount |
Package / Case Module |
Supplier Device Package ECONO3 4PACK |
Power - Max 892 W |
Configuration Full Bridge |
Current - Collector (Ic) (Max) 182 A |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
Current - Collector Cutoff (Max) 120 µA |
IGBT Type NPT |
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 200A |
Input Capacitance (Cies) @ Vce - |
Input Standard |
NTC Thermistor Yes |
Package_case Module |
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