Diodes Incorporated ZDT6705TA
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- ZDT6705TA
- Diodes Incorporated
- TRANS NPN/PNP DARL 120V 1A SM8
- Transistors - Bipolar (BJT) - Arrays
- ZDT6705TA Datasheet
- SOT-223-8
- Tape & Reel (TR)
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What is ZDT6705TA
Diodes Incorporated Part Number ZDT6705TA（Transistors - Bipolar (BJT) - Arrays）, developed and manufactured by Diodes Incorporated, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
ZDT6705TA is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
ZDT6705TA Specifications
- Part NumberZDT6705TA
- CategoryTransistors - Bipolar (BJT) - Arrays
- ManufacturerDiodes Incorporated
- DescriptionTRANS NPN/PNP DARL 120V 1A SM8
- PackageTape & Reel (TR)
- Series-
- Operating Temperature-55°C ~ 150°C (TJ)
- Mounting TypeSurface Mount
- Package / CaseSOT-223-8
- Supplier Device PackageSM8
- Power - Max2.75W
- Transistor TypeNPN, PNP Darlington (Dual)
- Current - Collector (Ic) (Max)1A
- Voltage - Collector Emitter Breakdown (Max)120V
- Vce Saturation (Max) @ Ib, Ic1.5V @ 1mA, 1A
- Current - Collector Cutoff (Max)10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 1A, 5V
- Frequency - Transition150MHz
Application of ZDT6705TA
ZDT6705TA Datasheet
ZDT6705TA Datasheet , Tape & Reel (TR),-55°C ~ 150°C (TJ),Surface Mount,SOT-223-8,SM8,2.75W,NPN, PNP Darlington (Dual),1A,120V,1.5V @ 1mA, 1A,10µA,2000 @ 1A, 5V,150MHz
ZDT6705TA Classification
Transistors - Bipolar (BJT) - Arrays
FAQ about Transistors - Bipolar (BJT) - Arrays
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1. What are the typical configurations in BJT arrays?
They can include combinations such as dual NPN, dual PNP, or mixed NPN and PNP transistors. Some arrays also include pre-biased transistors for specific applications.
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2. What are the limitations of BJT arrays?
While they save space, they can limit flexibility if specific transistor types or configurations are needed. Also, thermal coupling might not always be beneficial in all scenarios.
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3. What are key specifications to consider when selecting a BJT array?
Important parameters include collector current (Ic), voltage rating (Vce), hFE (current gain), and thermal resistance for reliability in operation.
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