Diodes Incorporated ZTX649STOA
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- ZTX649STOA
- Diodes Incorporated
- TRANS NPN 25V 2A E-LINE
- Transistors - Bipolar (BJT) - Single
- ZTX649STOA Datasheet
- E-Line-3, Formed Leads
- Tape & Reel (TR)
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What is ZTX649STOA
Diodes Incorporated Part Number ZTX649STOA（Transistors - Bipolar (BJT) - Single）, developed and manufactured by Diodes Incorporated, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
ZTX649STOA is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
ZTX649STOA Specifications
- Part NumberZTX649STOA
- CategoryTransistors - Bipolar (BJT) - Single
- ManufacturerDiodes Incorporated
- DescriptionTRANS NPN 25V 2A E-LINE
- PackageTape & Reel (TR)
- Series-
- Operating Temperature-55°C ~ 200°C (TJ)
- Mounting TypeThrough Hole
- Package / CaseE-Line-3, Formed Leads
- Supplier Device PackageE-Line (TO-92 compatible)
- Power - Max1 W
- Transistor TypeNPN
- Current - Collector (Ic) (Max)2 A
- Voltage - Collector Emitter Breakdown (Max)25 V
- Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
- Current - Collector Cutoff (Max)100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A, 2V
- Frequency - Transition240MHz
Application of ZTX649STOA
ZTX649STOA Datasheet
ZTX649STOA Datasheet , Tape & Reel (TR),-55°C ~ 200°C (TJ),Through Hole,E-Line-3, Formed Leads,E-Line (TO-92 compatible),1 W,NPN,2 A,25 V,500mV @ 200mA, 2A,100nA (ICBO),100 @ 1A, 2V,240MHz
ZTX649STOA Classification
Transistors - Bipolar (BJT) - Single
FAQ about Transistors - Bipolar (BJT) - Single
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1. What is a bipolar transistor?
A bipolar transistor, or bipolar junction transistor (BJT), is an electronic device with three terminals, consisting of three semiconductors with different doping levels. It was successfully developed by William Shockley, John Bardeen and Walter Brattain of Bell Labs in 1947, marking the birth of semiconductor device technology.
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2. Is BJT bipolar or unipolar?
BJT (bipolar junction transistor) is bipolar. BJT (bipolar junction transistor) is composed of two N-type semiconductors sandwiched between a P-type semiconductor, with an emitter junction formed between the emitter and the base, and a collector junction formed between the collector and the base. When the power is turned on, the majority carriers (electrons) in the emitter and the majority carriers (holes) in the base diffuse with each other, forming a current amplification effect.
The working principle of BJT is to achieve current amplification through the control of two PN junctions (emitter junction and collector junction). When the emitter junction is forward biased, electrons are injected from the emitter region into the base region; when the collector junction is reverse biased, electrons are injected from the base region into the collector region. Because the base region is very thin and the impurity content is strictly controlled, most electrons can enter the collector region through the collector junction to form the collector current Ic, and only a small number of electrons recombine with holes in the base region to form the base current Ib. Therefore, by controlling the base current Ib, the collector current Ic can be amplified to achieve current amplification. -
3. Is BJT transistor a bipolar device?
BJT transistor is a bipolar junction transistor (Bipolar Junction Transistor, referred to as BJT), which is a bipolar device. BJT is composed of two PN junctions, divided into PNP and NPN types, and works through two PN junctions to achieve current amplification.
The working principle of BJT is to amplify the collector current by controlling the base current. When the base potential is higher than the emitter potential, the emitter junction is in a forward biased state, and the collector junction is in a reverse biased state. Since the majority carrier concentration in the emitter region is greater than that in the base region, most of the electrons injected into the base region pass over the collector junction and enter the collector region, forming a collector current, thereby achieving current amplification.
BJT is widely used in electronic circuits, such as amplifiers, switches, oscillators, etc., with amplification capabilities, linear amplification characteristics and high frequency response.
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