Diodes Incorporated ZXTN25050DFHTA
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- ZXTN25050DFHTA
- Diodes Incorporated
- TRANS NPN 50V 4A SOT23-3
- Transistors - Bipolar (BJT) - Single
- ZXTN25050DFHTA Datasheet
- TO-236-3, SC-59, SOT-23-3
- -Reel®
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Lead free / RoHS Compliant - 2772
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- 1 year quality assurance 》
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What is ZXTN25050DFHTA
Diodes Incorporated Part Number ZXTN25050DFHTA（Transistors - Bipolar (BJT) - Single）, developed and manufactured by Diodes Incorporated, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
ZXTN25050DFHTA is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
ZXTN25050DFHTA Specifications
- Part NumberZXTN25050DFHTA
- CategoryTransistors - Bipolar (BJT) - Single
- ManufacturerDiodes Incorporated
- DescriptionTRANS NPN 50V 4A SOT23-3
- Package-Reel®
- Series-
- Operating Temperature-55°C ~ 150°C (TJ)
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Supplier Device PackageSOT-23-3
- Power - Max1.25 W
- Transistor TypeNPN
- Current - Collector (Ic) (Max)4 A
- Voltage - Collector Emitter Breakdown (Max)50 V
- Vce Saturation (Max) @ Ib, Ic210mV @ 400mA, 4A
- Current - Collector Cutoff (Max)50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 10mA, 2V
- Frequency - Transition200MHz
Application of ZXTN25050DFHTA
ZXTN25050DFHTA Datasheet
ZXTN25050DFHTA Datasheet , -Reel®,-55°C ~ 150°C (TJ),Surface Mount,TO-236-3, SC-59, SOT-23-3,SOT-23-3,1.25 W,NPN,4 A,50 V,210mV @ 400mA, 4A,50nA (ICBO),300 @ 10mA, 2V,200MHz
ZXTN25050DFHTA Classification
Transistors - Bipolar (BJT) - Single
FAQ about Transistors - Bipolar (BJT) - Single
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1. What is a bipolar transistor?
A bipolar transistor, or bipolar junction transistor (BJT), is an electronic device with three terminals, consisting of three semiconductors with different doping levels. It was successfully developed by William Shockley, John Bardeen and Walter Brattain of Bell Labs in 1947, marking the birth of semiconductor device technology.
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2. Is PNP transistor bipolar?
PNP transistor is a bipolar transistor. PNP transistor is a bipolar transistor used in electronic circuits to amplify, switch and control current. Its name "PNP" represents the three different semiconductor regions in its structure: two positive poles (P type) and one negative pole (N type).
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3. Is BJT transistor a bipolar device?
BJT transistor is a bipolar junction transistor (Bipolar Junction Transistor, referred to as BJT), which is a bipolar device. BJT is composed of two PN junctions, divided into PNP and NPN types, and works through two PN junctions to achieve current amplification.
The working principle of BJT is to amplify the collector current by controlling the base current. When the base potential is higher than the emitter potential, the emitter junction is in a forward biased state, and the collector junction is in a reverse biased state. Since the majority carrier concentration in the emitter region is greater than that in the base region, most of the electrons injected into the base region pass over the collector junction and enter the collector region, forming a collector current, thereby achieving current amplification.
BJT is widely used in electronic circuits, such as amplifiers, switches, oscillators, etc., with amplification capabilities, linear amplification characteristics and high frequency response.
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