Diodes Incorporated ZXTP03200BGTA
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- ZXTP03200BGTA
- Diodes Incorporated
- TRANS PNP 200V 2A
- Transistors - Bipolar (BJT) - Single
- ZXTP03200BGTA Datasheet
- TO-261-4, TO-261AA
- Tube
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Lead free / RoHS Compliant - 13600
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What is ZXTP03200BGTA
Diodes Incorporated Part Number ZXTP03200BGTA（Transistors - Bipolar (BJT) - Single）, developed and manufactured by Diodes Incorporated, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
ZXTP03200BGTA is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
ZXTP03200BGTA Specifications
- Part NumberZXTP03200BGTA
- CategoryTransistors - Bipolar (BJT) - Single
- ManufacturerDiodes Incorporated
- DescriptionTRANS PNP 200V 2A
- PackageTube
- Series-
- Operating Temperature-55°C ~ 150°C (TJ)
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Supplier Device PackageSOT-223-3
- Power - Max1.25 W
- Transistor TypePNP
- Current - Collector (Ic) (Max)2 A
- Voltage - Collector Emitter Breakdown (Max)200 V
- Vce Saturation (Max) @ Ib, Ic275mV @ 400mA, 2A
- Current - Collector Cutoff (Max)50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A, 5V
- Frequency - Transition105MHz
Application of ZXTP03200BGTA
ZXTP03200BGTA Datasheet
ZXTP03200BGTA Datasheet , Tube,-55°C ~ 150°C (TJ),Surface Mount,TO-261-4, TO-261AA,SOT-223-3,1.25 W,PNP,2 A,200 V,275mV @ 400mA, 2A,50nA (ICBO),100 @ 1A, 5V,105MHz
ZXTP03200BGTA Classification
Transistors - Bipolar (BJT) - Single
FAQ about Transistors - Bipolar (BJT) - Single
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1. What is a bipolar transistor?
A bipolar transistor, or bipolar junction transistor (BJT), is an electronic device with three terminals, consisting of three semiconductors with different doping levels. It was successfully developed by William Shockley, John Bardeen and Walter Brattain of Bell Labs in 1947, marking the birth of semiconductor device technology.
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2. Is PNP transistor bipolar?
PNP transistor is a bipolar transistor. PNP transistor is a bipolar transistor used in electronic circuits to amplify, switch and control current. Its name "PNP" represents the three different semiconductor regions in its structure: two positive poles (P type) and one negative pole (N type).
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3. What are the two types of BJT transistors?
There are two main types of BJT transistors: NPN and PNP.
NPN transistor
In an NPN transistor, current flows from the collector to the emitter. The base of an NPN transistor must be connected to a positive voltage for current to flow in. As the current flowing to the base increases, the transistor gradually turns on until the current is completely conducted from the collector to the emitter.
PNP Transistor
In a PNP transistor, the current flows from the emitter to the collector. Therefore, the base of the PNP transistor must be grounded. When the output current is small and the base is negative relative to the emitter, the transistor will turn on and a larger current will flow from the emitter to the collector. Basically, if the base and collector are negative relative to the emitter, the PNP transistor will conduct current from the emitter to the collector.
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