The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
Increased power density and efficiency: As electronic equipment has higher and higher requirements for power density and efficiency, IGBT manufacturers MITSUBISH, FUJITSU, Infineon, STM, etc. have been working hard to meet the requirements by improving equipment design and introducing new manufacturing technologies. these requirements. For example, by using new semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN). As well as more advanced chip packaging technology, it is possible to achieve an increase in power density and a reduction in power consumption.
Intelligence: With the development of the Internet of Things (IoT), big data and artificial intelligence (AI), intelligence is a major development trend of IGBTs. This intelligence can help IGBTs better adapt to changing operating environments, improve energy efficiency, reduce failure rates, and increase equipment reliability and lifespan.
Wider application fields: The application fields of IGBTs are constantly expanding. In addition to traditional industrial, energy and automotive applications, it is gradually expanding into more other fields, such as consumer electronics, medical equipment and renewable energy systems.
The following is a brief description of several IGBT models with a wide range of applications:
Electrotechnical field: IGBT module DIPIPM DUAL-IN-LINE
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
Variable Speed Pumps
Variable Speed Compressors
Small Motor Control Ordering Information:PS22A78-E is a 1200V, 35 Ampere DIP Intelligent Power Module
PSS35SA2FT
MAIN FUNCTION AND RATINGS
3 phase DC/AC inverter
600V / 30A (CSTBT)
N-side IGBT open emitter
Built-in bootstrap diodes with current limiting resistor APPLICATION
AC 100~240Vrms(DC voltage:400V or below) classlow power motor controlTYPE NAMEPSS30S71F6With temperature output functionINTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
For P-side : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection
For N-side :Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC),
Fault signaling : Corresponding to SC fault (N-side IGBT), UV fault (N-side supply)
Temperature output : Outputting LVIC temperature by analog signal
Input interface : 3, 5V line, Schmitt trigger receiver circuit (High Active)
UL Recognized : UL1557 File E80276
Below Transistors - IGBTs - Modules
CM100DU-24NFH
CM600DY-24A
MG06150S-BN4MM
MG06200S-BN4MM
CM300DY-24S
CM300DY-12NF
Other IGBT modules are available at jinftry, you can log in to jinftry.com for customer consultation. We will reply as soon as possible.
