FMMTH10TC vs BFS17HTC

Part Number
FMMTH10TC
BFS17HTC
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
Manufacturer Diodes Incorporated Diodes Incorporated
Description RF TRANS NPN 25V 650MHZ SOT23-3 RF TRANS NPN 15V 1.3GHZ SOT23-3
Package Tape & Reel (TR) Tape & Reel (TR)
Series - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3
Gain - -
Power - Max 330mW 330mW
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 25mA 25mA
Voltage - Collector Emitter Breakdown (Max) 25V 15V
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V 70 @ 2mA, 1V
Frequency - Transition 650MHz 1.3GHz
Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 500MHz 4.5dB @ 500MHz
  • 1. What are RF BJTs used for?

    RF BJTs are used in high-frequency applications, including amplifiers, oscillators, mixers, and RF front-end circuits in communication systems.

  • 2. What makes BJTs suitable for RF applications?

    Their ability to operate efficiently at high frequencies, fast switching characteristics, and high gain in specific configurations make them suitable for RF applications.

  • 3. How do RF BJTs differ from standard BJTs?

    RF BJTs are specifically optimized for high-frequency performance, featuring lower capacitance, faster transition times, and higher gain-bandwidth products compared to standard BJTs.

  • 4. What are the common biasing techniques for RF BJTs?

    Typical biasing methods include fixed bias, voltage-divider bias, and emitter-stabilized bias to ensure stability and proper operation at high frequencies.

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