FMMTH10TC

Diodes Incorporated FMMTH10TC

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  • FMMTH10TC
  • Diodes Incorporated
  • RF TRANS NPN 25V 650MHZ SOT23-3
  • Transistors - Bipolar (BJT) - RF
  • FMMTH10TC Datasheet
  • TO-236-3, SC-59, SOT-23-3
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4964
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates

What is FMMTH10TC

Diodes Incorporated Part Number FMMTH10TCTransistors - Bipolar (BJT) - RF), developed and manufactured by Diodes Incorporated, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.

FMMTH10TC is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.

FMMTH10TC Specifications

  • Part NumberFMMTH10TC
  • CategoryTransistors - Bipolar (BJT) - RF
  • ManufacturerDiodes Incorporated
  • DescriptionRF TRANS NPN 25V 650MHZ SOT23-3
  • PackageTape & Reel (TR)
  • Series-
  • Operating Temperature-55°C ~ 150°C (TJ)
  • Mounting TypeSurface Mount
  • Package / CaseTO-236-3, SC-59, SOT-23-3
  • Supplier Device PackageSOT-23-3
  • Gain-
  • Power - Max330mW
  • Transistor TypeNPN
  • Current - Collector (Ic) (Max)25mA
  • Voltage - Collector Emitter Breakdown (Max)25V
  • DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 4mA, 10V
  • Frequency - Transition650MHz
  • Noise Figure (dB Typ @ f)3dB ~ 5dB @ 500MHz

Application of FMMTH10TC

Bipolar (BJT) -RF plays an important role in many fields such as modern communication, radar detection and satellite navigation. In the field of wireless communication, BJT is widely used in the RF front-end of mobile phones, base stations, radio stations and other equipment to realize signal transceiver and processing. With the development of new generation communication technologies such as 5G and 6G, the performance requirements for RF devices are getting higher and higher, and BJT has shown strong competitiveness in high frequency, broadband, low power consumption and other aspects with its unique advantages. In the field of radar detection, BJT is used to build high-performance RF transceiver system to improve the detection range and resolution of radar. At the same time, BJT also plays an important role in space applications such as satellite navigation and remote sensing, providing stable and reliable RF support for satellite communication systems.

FMMTH10TC Datasheet

FMMTH10TC Datasheet , Tape & Reel (TR),-55°C ~ 150°C (TJ),Surface Mount,TO-236-3, SC-59, SOT-23-3,SOT-23-3,330mW,NPN,25mA,25V,60 @ 4mA, 10V,650MHz,3dB ~ 5dB @ 500MHz

FMMTH10TC Classification

Transistors - Bipolar (BJT) - RF

Bipolar (BJT) -RF refers to radio frequency circuits designed using Bipolar Junction transistors (BJT) for processing high frequency signals. This type of BJT has been specially designed with low parasitic effects and high gain characteristics, allowing it to provide excellent performance in RF applications. Bipolar (BJT) -RF circuits are commonly used in RF front-end components such as RF amplifiers, mixers, and oscillators.

FAQ about Transistors - Bipolar (BJT) - RF

  • 1. What are RF BJTs used for?

    RF BJTs are used in high-frequency applications, including amplifiers, oscillators, mixers, and RF front-end circuits in communication systems.

  • 2. What makes BJTs suitable for RF applications?

    Their ability to operate efficiently at high frequencies, fast switching characteristics, and high gain in specific configurations make them suitable for RF applications.

  • 3. What are the common biasing techniques for RF BJTs?

    Typical biasing methods include fixed bias, voltage-divider bias, and emitter-stabilized bias to ensure stability and proper operation at high frequencies.

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568248857, 827259012, 316249462
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Diodes Incorporated
Diodes Incorporated
Diodes Incorporated was founded in 1968 in the United States, with its headquarters located in Plano, Texas and Milpitas, California. It is a S&P small cap 600 and Russell 3000 index company, as well as...
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