FMMTH10TC vs ZUMTS17HTC
| Part Number |
|
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| Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
| Manufacturer | Diodes Incorporated | Diodes Incorporated |
| Description | RF TRANS NPN 25V 650MHZ SOT23-3 | RF TRANS NPN 15V 1.3GHZ SOT323 |
| Package | Tape & Reel (TR) | Tape & Reel (TR) |
| Series | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | SC-70, SOT-323 |
| Supplier Device Package | SOT-23-3 | SOT-323 |
| Gain | - | - |
| Power - Max | 330mW | 330mW |
| Transistor Type | NPN | NPN |
| Current - Collector (Ic) (Max) | 25mA | 25mA |
| Voltage - Collector Emitter Breakdown (Max) | 25V | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V | 70 @ 2mA, 1V |
| Frequency - Transition | 650MHz | 1.3GHz |
| Noise Figure (dB Typ @ f) | 3dB ~ 5dB @ 500MHz | 4.5dB @ 500MHz |
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1. What makes BJTs suitable for RF applications?
Their ability to operate efficiently at high frequencies, fast switching characteristics, and high gain in specific configurations make them suitable for RF applications.
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2. How do RF BJTs differ from standard BJTs?
RF BJTs are specifically optimized for high-frequency performance, featuring lower capacitance, faster transition times, and higher gain-bandwidth products compared to standard BJTs.
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3. What are some common RF BJT packages?
Popular packages include TO-92, SOT-23, and SOT-89, which are designed for compact, low-inductance layouts suited for RF circuits.
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4. What are the common biasing techniques for RF BJTs?
Typical biasing methods include fixed bias, voltage-divider bias, and emitter-stabilized bias to ensure stability and proper operation at high frequencies.
