FMMTH10TC vs SD1275-01

Part Number
FMMTH10TC
SD1275-01
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
Manufacturer Diodes Incorporated STMicroelectronics
Description RF TRANS NPN 25V 650MHZ SOT23-3 RF TRANS NPN 16V M113
Package Tape & Reel (TR) Box
Series - -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 M113
Supplier Device Package SOT-23-3 M113
Gain - 9dB
Power - Max 330mW 70W
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 25mA 8A
Voltage - Collector Emitter Breakdown (Max) 25V 16V
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V 20 @ 250mA, 5V
Frequency - Transition 650MHz -
Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 500MHz -
  • 1. What makes BJTs suitable for RF applications?

    Their ability to operate efficiently at high frequencies, fast switching characteristics, and high gain in specific configurations make them suitable for RF applications.

  • 2. What are the typical frequency ranges for RF BJTs?

    RF BJTs typically operate in the range of MHz to GHz, depending on their design and specifications.

  • 3. How do RF BJTs differ from standard BJTs?

    RF BJTs are specifically optimized for high-frequency performance, featuring lower capacitance, faster transition times, and higher gain-bandwidth products compared to standard BJTs.

  • 4. What are some common RF BJT packages?

    Popular packages include TO-92, SOT-23, and SOT-89, which are designed for compact, low-inductance layouts suited for RF circuits.

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