MT53D512M64D4RQ-053 WT:E TR vs MT53D768M64D8JS-053 WT:D TR

Part Number
MT53D512M64D4RQ-053 WT:E TR
MT53D768M64D8JS-053 WT:D TR
Category General Memory General Memory
Manufacturer Micron Technology Inc. Micron Technology Inc.
Description IC DRAM 32GBIT 1866MHZ 556WFBGA IC DRAM 48GBIT 1866MHZ 366VFBGA
Package Tape & Reel (TR) Tape & Reel (TR)
Series - -
Voltage - Supply 1.1V 1.1V
Operating Temperature -30°C ~ 85°C (TC) -30°C ~ 85°C (TC)
Mounting Type Surface Mount Surface Mount
Package / Case 556-WFBGA 366-VFBGA
Supplier Device Package 556-WFBGA (12.4x12.4) 366-VFBGA (12x12.7)
Memory Size 32Gb (512M x 64) 48Gb (768M x 64)
Technology SDRAM - Mobile LPDDR4 SDRAM - Mobile LPDDR4
Memory Type Volatile Volatile
Clock Frequency 1.866 GHz 1.866 GHz
Access Time - -
Memory Format DRAM DRAM
Write Cycle Time - Word, Page - -
Memory Interface - -
  • 1. What is embedded memory?

    Embedded memory is a memory integrated into an electronic system for real-time data processing and program execution of the device. It is commonly found in microcontrollers, mobile devices, and embedded systems.

  • 2. How to measure the data read and write speed of memory?

    The read and write speed of memory is usually expressed in MB/s or GB/s, reflecting the amount of data it processes per second. The faster the speed, the higher the data transmission efficiency.

  • 3. What is the difference between SRAM and DRAM?

    SRAM (static RAM) does not require periodic refreshes and is faster but more expensive; DRAM (dynamic RAM) requires periodic refreshes and has a higher storage density and is suitable for main memory.

  • 4. Why is the DRAM refresh rate important?

    DRAM needs to be refreshed regularly to maintain data. The refresh rate affects the power consumption and speed of the memory. The higher the refresh rate, the faster the memory responds, but it also increases power consumption.

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