SI3465DV-T1-E3 vs NTLUS3A90PZTBG
| Part Number |
|
|
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| Manufacturer | Vishay Siliconix | ON Semiconductor |
| Description | MOSFET P-CH 20V 3A 6-TSOP | MOSFET P-CH 20V 2.6A 6UDFN |
| Package | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) |
| Series | TrenchFET? | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | 6-PowerUFDFN |
| Supplier Device Package | 6-TSOP | 6-UDFN (1.6x1.6) |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 1.14W (Ta) | 600mW (Ta) |
| FET Type | P-Channel | P-Channel |
| Drain to Source Voltage (Vdss) | 20V | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) | 2.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 80 mOhm @ 4A, 10V | 62mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id | 3V @ 250µA | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 5V | 12.3 nC @ 4.5 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | - |
| Vgs (Max) | ±20V | ±8V |
| FET Feature | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | - | 950 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | - | 1.5V, 4.5V |
-
1. What is a MOSFET?
A MOSFET is a voltage-controlled field-effect transistor. It controls the flow of current between the source (Source, S) and drain (Drain, D) by applying a voltage to the gate (Gate, G).
-
2. How does a MOSFET work as an amplifier?
A MOSFET can change the resistance between the source and drain by adjusting the gate voltage, which in turn affects the current flowing through this path. This allows the input signal to be amplified.
-
3. How does a MOSFET work in an inverter?
In an inverter, a MOSFET is used as a switching element, quickly turning the circuit on or off according to the control signal, thereby converting DC power to AC power.
-
4. Is MOSFET 3-terminal or 4-terminal?
Basically, MOSFET is a three-terminal device (source S, drain D, and gate G). But in some cases, such as some high-voltage and high-power MOSFETs, there may be additional terminals (for example, substrate terminal B) to improve performance or reliability, so it is sometimes called a four-terminal device.
