Vishay Siliconix SI3465DV-T1-E3
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- SI3465DV-T1-E3
- Vishay Siliconix
- MOSFET P-CH 20V 3A 6-TSOP
- Transistors - FETs, MOSFETs - Single
- SI3465DV-T1-E3 Datasheet
- SOT-23-6 Thin, TSOT-23-6
- SOT-23-6 Thin, TSOT-23-6
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Lead free / RoHS Compliant - 3224
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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What is SI3465DV-T1-E3
Vishay Siliconix Part Number SI3465DV-T1-E3（Transistors - FETs, MOSFETs - Single）, developed and manufactured by Vishay Siliconix, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
SI3465DV-T1-E3 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
SI3465DV-T1-E3 Specifications
- Part NumberSI3465DV-T1-E3
- CategoryTransistors - FETs, MOSFETs - Single
- ManufacturerVishay Siliconix
- DescriptionMOSFET P-CH 20V 3A 6-TSOP
- PackageSOT-23-6 Thin, TSOT-23-6
- SeriesTrenchFET?
- Operating Temperature-55°C ~ 150°C (TJ)
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Supplier Device Package6-TSOP
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation (Max)1.14W (Ta)
- FET TypeP-Channel
- Drain to Source Voltage (Vdss)20V
- Current - Continuous Drain (Id) @ 25°C3A (Ta)
- Rds On (Max) @ Id, Vgs80 mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs5.5nC @ 5V
- Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
- Vgs (Max)±20V
Application of SI3465DV-T1-E3
SI3465DV-T1-E3 Datasheet
SI3465DV-T1-E3 Datasheet , SOT-23-6 Thin, TSOT-23-6,TrenchFET?,-55°C ~ 150°C (TJ),Surface Mount,SOT-23-6 Thin, TSOT-23-6,6-TSOP,MOSFET (Metal Oxide),1.14W (Ta),P-Channel,20V,3A (Ta),80 mOhm @ 4A, 10V,3V @ 250µA,5.5nC @ 5V,4.5V
SI3465DV-T1-E3 Classification
Transistors - FETs, MOSFETs - Single
FAQ about Transistors - FETs, MOSFETs - Single
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1. What is a MOSFET?
A MOSFET is a voltage-controlled field-effect transistor. It controls the flow of current between the source (Source, S) and drain (Drain, D) by applying a voltage to the gate (Gate, G).
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2. What is the difference between a MOSFET and a transistor?
Transistors are usually bipolar (BJT) and rely on current control, while MOSFETs are voltage controlled.
BJTs have a higher input impedance, but MOSFETs usually have a higher input impedance.
MOSFETs are better suited for high-frequency operation because they switch faster. -
3. What are the advantages of MOSFETs?
High input impedance.
Low noise.
Low power consumption.
Fast switching characteristics.
Easy to integrate.
High reliability and durability.
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