EPCOS (TDK) B72210S0301K331
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- B72210S0301K331
- EPCOS (TDK)
- VARISTOR 470V 2.5KA DISC 10MM
- TVS - Varistors, MOVs
- B72210S0301K331 Datasheet
- Disc 10mm
- Disc 10mm
-
Lead free / RoHS Compliant - 2681
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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What is B72210S0301K331
EPCOS (TDK) Part Number B72210S0301K331（TVS - Varistors, MOVs）, developed and manufactured by EPCOS (TDK), distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
B72210S0301K331 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
B72210S0301K331 Specifications
- Part NumberB72210S0301K331
- CategoryTVS - Varistors, MOVs
- ManufacturerEPCOS (TDK)
- DescriptionVARISTOR 470V 2.5KA DISC 10MM
- PackageDisc 10mm
- Series-
- Operating Temperature-40°C ~ 105°C (TA)
- Mounting TypeThrough Hole
- Package / CaseDisc 10mm
- Number of Circuits1
- Capacitance @ Frequency200pF @ 1kHz
- Varistor Voltage (Typ)470V
- Current - Surge2.5kA
- Maximum DC Volts385V
- Varistor Voltage (Min)423V
- Varistor Voltage (Max)517V
- Maximum AC Volts300V
- Energy47J
Application of B72210S0301K331
B72210S0301K331 Datasheet
B72210S0301K331 Datasheet , Disc 10mm,-40°C ~ 105°C (TA),Through Hole,Disc 10mm,1,200pF @ 1kHz,470V,2.5kA,385V,423V,517V,300V,47J
B72210S0301K331 Classification
TVS - Varistors, MOVs
FAQ about TVS - Varistors, MOVs
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1. What are Movs?
Movs(Move String) is an instruction cluster in assembly language, mainly used to copy strings. The Movs instruction cluster includes multiple variants for handling data movement operations of different lengths.
Basic Functions
The main function of the Movs instruction is to copy the data of the DSSI address to the ESDI address. Specifically:
MOVSB: Move one byte at a time.
MOVSW: Move one word (usually two bytes) at a time.
MOVSD: Move one double word (usually four bytes) at a time.
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2. What is the difference between TVS diodes and MOVs?
The main differences between TVS diodes and MOV varistors are the working principle, application scenarios and performance characteristics.
Working principle
T VS diode is a semiconductor device with nonlinear volt-ampere characteristics, and its working principle is based on the breakdown phenomenon of PN junction. When TVS diode is subjected to reverse transient high voltage, its impedance drops rapidly, absorbing most of the energy and clamping the voltage at a safe value, thereby protecting electronic components 12. TVS diode has a small leakage current before breakdown, and it behaves as a voltage regulator after breakdown, with a strong voltage clamping ability.
MOV varistor is a multi-layer structure made of zinc oxide material with a multi-grain structure, which absorbs surge current by changing the conduction resistance. When the voltage exceeds its varistor voltage, the resistance of MOV drops rapidly, shunting the current, thereby protecting the subsequent circuit 45. MOV has a higher clamping voltage when the current is too large, and a larger leakage current when the voltage is low.
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3. What is the difference between TVS diodes and varistors?
The main differences between TVS diodes and varistors are in working principles, response time, current carrying capacity, nonlinear characteristics, capacitance effects, reliability and life, and application scenarios.
Working principle:
TVS diode (ransient voltage suppressor) is a high-efficiency protection device in the form of a diode. When both ends are subjected to instantaneous high-energy impact, the TVS diode can quickly change the impedance value from high to low, absorb large current, and clamp the voltage to a predetermined value.
Varistors use their nonlinear characteristics to sharply reduce resistance when the voltage exceeds a certain threshold, thereby absorbing surge current.
Response time:
The response time of TVS diodes is very fast, usually at the sub-nanosecond level (ps level).
The response time of varistors is relatively slow, usually at the nanosecond level (ns level).
Current carrying capacity:
Varistor can withstand larger surge currents. The larger the volume, the greater the surge current it can withstand, which can reach tens of kA to hundreds of kA.
The current carrying capacity of TVS diodes is relatively small.
Nonlinear characteristics:
The nonlinear characteristics of TVS diodes are similar to those of voltage-stabilizing diodes. The leakage current is very small before breakdown, and it has standard voltage-stabilizing characteristics after breakdown.
The nonlinear characteristics of varistors are poor, with a higher limiting voltage at high currents and a larger leakage current at low voltages.
Capacitive effect:
The capacitance of TVS diodes and varistors is large, but TVS diodes also have low-capacitance products, which are suitable for the protection of high-speed signal lines.
Reliability and life:
TVS diodes have high reliability, are not easy to deteriorate, and have a long service life.
Varistors have poor reliability, are prone to aging, and have a short service life.
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