Diodes Incorporated DMN2016LHAB-7
- DMN2016LHAB-7
- Diodes Incorporated
- MOSFET 2N-CH 20V 7.5A 6UDFN
- Transistors - FETs, MOSFETs - Arrays
- DMN2016LHAB-7 Datasheet
- 6-UDFN Exposed Pad
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 20568
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number DMN2016LHAB-7 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Diodes Incorporated |
Description MOSFET 2N-CH 20V 7.5A 6UDFN |
Package Cut Tape (CT) |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 6-UDFN Exposed Pad |
Supplier Device Package U-DFN2030-6 (Type B) |
Power - Max 1.2W |
FET Type 2 N-Channel (Dual) Common Drain |
FET Feature Logic Level Gate |
Drain to Source Voltage (Vdss) 20V |
Current - Continuous Drain (Id) @ 25°C 7.5A |
Rds On (Max) @ Id, Vgs 15.5mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 10V |
Package_case 6-UDFN Exposed Pad |
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Diodes Incorporated
Diodes Incorporated - Diodes Incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets. In November 2015, Pericom Semiconductor became ...
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