IPB77N06S212ATMA2

Infineon Technologies IPB77N06S212ATMA2

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  • IPB77N06S212ATMA2
  • Infineon Technologies
  • MOSFET N-CH 55V 77A TO263-3
  • Transistors - FETs, MOSFETs - Single
  • IPB77N06S212ATMA2 Datasheet
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3712
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
IPB77N06S212ATMA2
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 55V 77A TO263-3
Package
Tape & Reel (TR)
Series
OptiMOS™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3-2
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
158W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
77A (Tc)
Rds On (Max) @ Id, Vgs
11.7mOhm @ 38A, 10V
Vgs(th) (Max) @ Id
4V @ 93µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1770 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Infineon Technologies
Infineon Technologies
Founded on April 1, 1999, Infineon Technologies is a leading global semiconductor company and one of the largest semiconductor product manufacturers in Germany. The company is headquartered in Munich, Germany, and its predecessor was the...
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