Renesas Electronics America Inc ISL6609IBZ
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- ISL6609IBZ
- Renesas Electronics America Inc
- IC GATE DRVR HALF-BRIDGE 8SOIC
- PMIC - Gate Drivers
- ISL6609IBZ Datasheet
- 8-SOIC (0.154\", 3.90mm Width)
- Tube
-
Lead free / RoHS Compliant - 25581
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
What is ISL6609IBZ
Renesas Electronics America Inc Part Number ISL6609IBZ（PMIC - Gate Drivers）, developed and manufactured by Renesas Electronics America Inc, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
ISL6609IBZ is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
ISL6609IBZ Specifications
- Part NumberISL6609IBZ
- CategoryPMIC - Gate Drivers
- ManufacturerRenesas Electronics America Inc
- DescriptionIC GATE DRVR HALF-BRIDGE 8SOIC
- PackageTube
- Series-
- Voltage - Supply4.5V ~ 5.5V
- Operating Temperature-40°C ~ 125°C (TJ)
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154\", 3.90mm Width)
- Supplier Device Package8-SOIC
- Input TypeNon-Inverting
- Channel TypeSynchronous
- Rise / Fall Time (Typ)8ns, 8ns
- Driven ConfigurationHalf-Bridge
- Number of Drivers2
- Gate TypeN-Channel MOSFET
- Logic Voltage - VIL, VIH1V, 2V
- Current - Peak Output (Source, Sink)-, 4A
- High Side Voltage - Max (Bootstrap)36 V
Application of ISL6609IBZ
ISL6609IBZ Datasheet
ISL6609IBZ Datasheet , Tube,4.5V ~ 5.5V,-40°C ~ 125°C (TJ),Surface Mount,8-SOIC (0.154\", 3.90mm Width),8-SOIC,Non-Inverting,Synchronous,8ns, 8ns,Half-Bridge,2,N-Channel MOSFET,1V, 2V,-, 4A,36 V
ISL6609IBZ Classification
PMIC - Gate Drivers
FAQ about PMIC - Gate Drivers
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1. How to choose a gate driver for a MOSFET?
When selecting a gate driver for a MOSFET, the following key factors need to be considered:
Current drive capability: The current drive capability of the gate driver directly affects the turn-on and turn-off speed of the MOSFET. Higher current sinking and sourcing capabilities mean faster turn-on and turn-off speeds, thereby reducing switching losses.
Fault detection function: The gate driver should have fault detection functions such as undervoltage lockout (UVLO), desaturation (DESAT) detection, etc. to ensure the safety and stable operation of the system.
Interference immunity: Common mode transient immunity (CMTI) is an important parameter to measure the anti-interference ability of the gate driver. In high-power systems, high CMTI values can better resist voltage transients and ensure stable operation of the system.
Electrical isolation: Electrically isolated gate drivers can achieve electrical isolation between control signals and power devices to ensure system safety. Optical coupling isolation and magnetic coupling isolation are common electrical isolation technologies, and the selection should be compared according to application requirements.
Switching frequency: For high-frequency switching applications, the switching frequency of the gate driver should match the switching frequency of the MOSFET to ensure efficient operation.
Transmission delay: Transmission delay and transmission delay matching are important parameters of electrical isolation drivers, which affect the response speed of the signal and the stability of the system. -
2. What are the different types of gate drivers?
There are mainly the following types of gate drivers:
High-frequency high-voltage gate driver: This driver can drive two N-channel MOSFETs, supports a power supply voltage of up to 100V, has strong driving capabilities, is suitable for MOSFETs with high gate capacitance, and can reduce switching losses. It also has features such as undervoltage lockout and adaptive shoot-through protection.
HL-type gate driver: The HL-type driver drives two N-channel MOSFETs in a half-bridge configuration and supports a power supply voltage of up to 140V. It has independent control outputs and strong anti-interference ability, and is suitable for application scenarios that require independent control of two MOSFETs. The HL type driver also has functions such as UVLO, TTL/CMOS compatible input, adjustable turn-on/off delay and shoot-through protection.
Pulse transformer drive: This driver does not require a separate drive voltage, and applies a high voltage to the gate through a pulse transformer, which is suitable for half-bridge or full-bridge circuits. It uses a capacitor and pulse transformer in series to increase the switching speed, and quickly resets the pulse transformer through a Zener diode.
Optocoupler and floating power supply drive: This driver uses an optocoupler to isolate the microcontroller and power transistor, and requires a separate floating power supply. The optocoupler output requires a separate power supply, which is suitable for high-side drive of half-bridge or full-bridge.
Push-pull circuit: The push-pull circuit is suitable for situations where the drive current is insufficient. It provides sufficient drive current by alternating between two transistors, which is suitable for application scenarios that require high drive current.
Half-bridge/full-bridge high-end drive: This driver applies a high voltage to the gate, which is suitable for half-bridge or full-bridge circuits. Since the source voltage of the high-end MOSFET changes, it needs to be powered independently and cannot share a ground with the low-end MOSFET.
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3. What is the difference between MOSFET and IGBT gate drivers?
The gate drivers of MOSFET and IGBT have significant differences in drive voltage, drive current, and drive mode.
Drive Voltage and Drive Current
MOSFET: The gate drive voltage of MOSFET is low, usually between 10V and 20V. Due to its structural characteristics, the driving current of MOSFET is also relatively small, which is suitable for using a smaller driving circuit.
IGBT: The gate driving voltage of IGBT is relatively high, usually between 15V and 20V. Due to its composite structure, IGBT requires a large driving current to control its conduction and cutoff, and usually requires a special driving circuit to provide sufficient driving power.
Driving method
MOSFET: The switching speed of MOSFET is very fast and suitable for high-frequency applications. Its driving method is relatively simple, and the gate can be directly controlled by voltage to achieve fast switching action.
IGBT: The switching speed of IGBT is slow and suitable for low-frequency applications. Due to its composite structure, IGBT requires a larger driving current and a more complex driving circuit to ensure its stable operation. IGBT usually requires positive and negative voltages to control its conduction and cutoff, especially when it is turned off, a negative voltage is required to eliminate the current tailing effect.
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