NTE Electronics, Inc NTE2351
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- NTE2351
- NTE Electronics, Inc
- TRANS NPN 80V 4A 3SIP
- Transistors - Bipolar (BJT) - Single
- NTE2351 Datasheet
- 3-SIP
- Bag
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Lead free / RoHS Compliant - 1645
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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What is NTE2351
NTE Electronics, Inc Part Number NTE2351（Transistors - Bipolar (BJT) - Single）, developed and manufactured by NTE Electronics, Inc, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
NTE2351 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
NTE2351 Specifications
- Part NumberNTE2351
- CategoryTransistors - Bipolar (BJT) - Single
- ManufacturerNTE Electronics, Inc
- DescriptionTRANS NPN 80V 4A 3SIP
- PackageBag
- Series-
- Operating Temperature150°C (TJ)
- Mounting TypeThrough Hole
- Package / Case3-SIP
- Supplier Device Package3-SIP
- Power - Max1 W
- Transistor TypeNPN - Darlington
- Current - Collector (Ic) (Max)4 A
- Voltage - Collector Emitter Breakdown (Max)80 V
- Vce Saturation (Max) @ Ib, Ic1.5V @ 6mA, 3A
- Current - Collector Cutoff (Max)20µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 1A, 2V
- Frequency - Transition-
Application of NTE2351
NTE2351 Datasheet
NTE2351 Datasheet , Bag,150°C (TJ),Through Hole,3-SIP,3-SIP,1 W,NPN - Darlington,4 A,80 V,1.5V @ 6mA, 3A,20µA (ICBO),2000 @ 1A, 2V
NTE2351 Classification
Transistors - Bipolar (BJT) - Single
FAQ about Transistors - Bipolar (BJT) - Single
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1. What is a bipolar transistor?
A bipolar transistor, or bipolar junction transistor (BJT), is an electronic device with three terminals, consisting of three semiconductors with different doping levels. It was successfully developed by William Shockley, John Bardeen and Walter Brattain of Bell Labs in 1947, marking the birth of semiconductor device technology.
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2. Is BJT transistor a bipolar device?
BJT transistor is a bipolar junction transistor (Bipolar Junction Transistor, referred to as BJT), which is a bipolar device. BJT is composed of two PN junctions, divided into PNP and NPN types, and works through two PN junctions to achieve current amplification.
The working principle of BJT is to amplify the collector current by controlling the base current. When the base potential is higher than the emitter potential, the emitter junction is in a forward biased state, and the collector junction is in a reverse biased state. Since the majority carrier concentration in the emitter region is greater than that in the base region, most of the electrons injected into the base region pass over the collector junction and enter the collector region, forming a collector current, thereby achieving current amplification.
BJT is widely used in electronic circuits, such as amplifiers, switches, oscillators, etc., with amplification capabilities, linear amplification characteristics and high frequency response. -
3. What are the two types of BJT transistors?
There are two main types of BJT transistors: NPN and PNP.
NPN transistor
In an NPN transistor, current flows from the collector to the emitter. The base of an NPN transistor must be connected to a positive voltage for current to flow in. As the current flowing to the base increases, the transistor gradually turns on until the current is completely conducted from the collector to the emitter.
PNP Transistor
In a PNP transistor, the current flows from the emitter to the collector. Therefore, the base of the PNP transistor must be grounded. When the output current is small and the base is negative relative to the emitter, the transistor will turn on and a larger current will flow from the emitter to the collector. Basically, if the base and collector are negative relative to the emitter, the PNP transistor will conduct current from the emitter to the collector.
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